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參數(shù)資料
| 型號： | STGP10NB37LZ |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL CLAMPED 20A - TO-220 INTERNALLY CLAMPED PowerMesh⑩ IGBT |
| 中文描述： | N通道鉗位20A條-對220內(nèi)部鉗位PowerMesh⑩IGBT的 |
| 文件頁數(shù)： | 9/9頁 |
| 文件大?。?/td> | 267K |
| 代理商： | STGP10NB37LZ |
9/9
STGP10NB37LZ
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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PDF描述 |
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| STGW20NC60V | N-CHANNEL 30A - 600V - TO-220/TO-247 Very Fast PowerMESH IGBT |
| STH13NB60FI | N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強模式MOSFET) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STGP10NB60S | 功能描述:IGBT 晶體管 N-Ch 600 Volt 10 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGP10NB60S_05 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT |
| STGP10NB60SD | 功能描述:IGBT 晶體管 N-Ch 600 V 10 A Low Drop PowerMESH RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGP10NB60SDFP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 10A - 600V - TO-220FP PowerMesh⑩ IGBT |
| STGP10NB60SFP | 功能描述:IGBT 晶體管 N-CH 10 A 600V PowerMESH RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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