參數(shù)資料
型號: STGP10NB37LZ
廠商: 意法半導(dǎo)體
英文描述: N-CHANNEL CLAMPED 20A - TO-220 INTERNALLY CLAMPED PowerMesh⑩ IGBT
中文描述: N通道鉗位20A條-對220內(nèi)部鉗位PowerMesh⑩IGBT的
文件頁數(shù): 2/9頁
文件大小: 267K
代理商: STGP10NB37LZ
STGP10NB37LZ
2/9
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
ELECTRICAL CHARACTERISTICS
(TCASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
BV
(CES)
Clamped Voltage
I
C
= 2 mA, V
GE
= 0,
Tj= - 40°C to 150°C
BV
(ECR)
Emitter Collector Break-down
Voltage
Tj= - 40°C to 150°C
BV
GE
Gate Emitter Break-down
Voltage
Tj= - 40°C to 150°C
I
CES
Collector cut-off Current
(V
GE
= 0)
V
CE
=200 V, V
GE
=0 ,T
C
=150°C
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
R
GE
Gate Emitter Resistance
ON
(1)
Symbol
V
GE(th)
DYNAMIC
Symbol
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
1.2
62.5
0.2
°C/W
°C/W
°C/W
Test Conditions
Min.
375
Typ.
400
Max.
425
Unit
V
I
EC
= 75 mA, V
GE
= 0,
18
V
I
G
= ± 2 mA
12
16
V
V
CE
= 15 V, V
GE
=0 ,T
j
=150 °C
10
μA
100
μA
V
GE
= ± 10V , V
CE
= 0
± 700
μA
20
K
Parameter
Test Conditions
V
CE
= V
GE
, I
C
= 250μA,
Tj= - 40°C to 150°C
V
GE
=4.5V, I
C
= 10 A, Tj= 25°C
V
GE
=4.5V, I
C
= 10 A, Tc= -40°C
V
GE
= 4.5V, V
CE
= 9 V
Min.
0.6
Typ.
Max.
2.4
Unit
V
Gate Threshold Voltage
V
CE(SAT)
Collector-Emitter Saturation
Voltage
1.2
1.8
V
1.3
V
I
C
Collector Current
20
A
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
C
ies
C
oes
Forward Transconductance
V
CE
= 15 V
,
I
C
=20 A
V
CE
= 25V, f = 1 MHz, V
GE
= 0
18
S
Input Capacitance
1250
pF
Output Capacitance
103
pF
C
res
Reverse Transfer
Capacitance
Gate Charge
18
pF
Q
g
V
CE
= 320V, I
C
= 10 A,
V
GE
= 5V
28
nC
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