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參數(shù)資料
| 型號： | STB5NA80 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel Enhancement Mode Power MOS Transistor(Ｎ溝道增強模式功率ＭＯＳ晶體管) |
| 中文描述： | N溝道增強模式功率MOS晶體管（不適用溝道增強模式功率馬鞍山晶體管） |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 131K |
| 代理商： | STB5NA80 |
THERMAL DATA
R
thj-case
R
thj-amb
R
thj-amb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
1
62.5
0.5
300
o
C/W
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
C, I
D
= I
AR
, V
DD
= 25 V)
Repetitive Avalanche Energy
(pulse width limited by T
j
max,
δ
< 1%)
Avalanche Current, Repetitive or Not-Repetitive
(T
c
= 100
o
C, pulse width limited by T
j
max,
δ
< 1%)
4.7
A
E
AS
110
mJ
E
AR
4.5
mJ
I
AR
3
A
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
I
D
= 250
μ
A
V
GS
= 0
800
V
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating x 0.8
V
GS
=
±
30 V
T
c
= 125
o
C
250
1000
μ
A
μ
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
±
100
nA
ON (
)
Symbol
Parameter
Test Conditions
I
D
= 250
μ
A
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
2.5
3
3.75
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
V
GS
= 10 V
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
I
D
= 2.5 A
I
D
= 2.5 A T
c
= 100
o
C
1.8
2.4
4.8
A
I
D(on)
On State Drain Current
4.7
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 2.5 A
2.7
5.2
S
C
iss
C
oss
C
rss
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
1250
140
35
1700
190
50
pF
pF
pF
STB5NA80
2/10
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB5NA80-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4.7A I(D) | TO-262AA |
| STB5NB60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 600V - 1.8ohm - 5A - I2PAK/D2PAK PowerMESH MOSFET |
| STB5NB60-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 5A I(D) | TO-251AA |
| STB5NB60T4 | 功能描述:MOSFET N-Ch 600 Volt 5 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB5NB80 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 800V - 1.8ohm - 5A -D2PAK PowerMESH] MOSFET |
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