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參數(shù)資料
| 型號(hào)： | STB60NE06L-16 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel 60V-0.014Ω-60A-D2PAK “SINGLE FEATURE SIZETM” Power MOSFET(N溝道功率MOSFET) |
| 中文描述： | N溝道60V的，0.014Ω- 60A型，采用D2PAK“單一的功能SIZETM”功率MOSFET（不適用溝道功率MOSFET的） |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 37K |
| 代理商： | STB60NE06L-16 |
STB60NE06L-16
N - CHANNEL 60V - 0.014
- 60A - D
2
PAK
”SINGLE FEATURE SIZE
” POWER MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 0.014
I
AVALANCERUGGED TECHNOLOGY
I
100% AVALANCHE TESTED
I
REPETITIVE AVALANCHE DATA AT100
o
C
I
LOW GATE CHARGE
I
HIGH CURRENT CAPABILITY
I
175
o
C OPERATING TEMPERATURE
I
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latestdevelopment of
STMicroelectronics
unique
Size
” strip-based
transistor shows extremely high packing density
for
low
on-resistance,
characteristics and less critical alignment steps
therefore
a
remarkable
reproducibility.
”Single
Feature
process. The resulting
rugged
avalanche
manufacturing
APPLICATIONS
I
HIGH CURRENT, HIGH SPEEDSWITCHING
I
SOLENOID ANDRELAY DRIVERS
I
DC-DC & DC-AC CONVERTER
I
AUTOMOTIVE ENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
June 1998
1
3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
Drain-source Voltage (V
GS
= 0)
60
V
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
60
V
V
GS
±
20
V
I
D
60
A
I
D
42
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
240
A
150
W
Derating Factor
0.57
W/
o
C
dv/dt
Peak Diode Recovery voltage slope
1
V/ns
o
C
o
C
T
stg
Storage Temperature
-65 to 175
T
j
Max. Operating Junction Temperature
(
) Pulse width limitedby safe operating area
175
(
1
) I
SD
≤
60 A,di/dt
≤
300 A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
<0.016
I
D
STB60NE06L-16
60 V
60 A
D
2
PAK
TO-263
(Suffix ”T4”)
1/5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STB60NF03L | N-CHANNEL 30V - 0.008 ohm - 60A D2PAK STripFET POWER MOSFET |
| STB60NF06L | N-CHANNEL 60V - 0.012 OHM - 60A TO-220/TO-220FP/D2PAK STripFET⑩ II POWER MOSFET |
| STP60NF06L | N-CHANNEL 60V - 0.012 OHM - 60A TO-220/TO-220FP/D2PAK STripFET⑩ II POWER MOSFET |
| STP60NF06LFP | N-CHANNEL 60V - 0.012 OHM - 60A TO-220/TO-220FP/D2PAK STripFET⑩ II POWER MOSFET |
| STB60NH02L | N-CHANNEL 24V - 0.0085 ohm - 60A DPAK STripFET⑩ III POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB60NE06L-16T4 | 功能描述:MOSFET N-Ch 60 Volt 60 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB60NF03L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 30V - 0.008 ohm - 60A D2PAK STripFET POWER MOSFET |
| STB60NF06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 60V - 0.014ヘ - 60A - D2PAK/I2PAK STripFET⑩ II Power MOSFET |
| STB60NF06_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 60V - 0.014ヘ - 60A - D2PAK/I2PAK STripFET⑩ II Power MOSFET |
| STB60NF06-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 60V - 0.014ヘ - 60A - D2PAK/I2PAK STripFET⑩ II Power MOSFET |
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