參數(shù)資料
型號： STB60NH02L
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 24V - 0.0085 ohm - 60A DPAK STripFET⑩ III POWER MOSFET
中文描述： N溝道24V的- 0.0085歐姆-第60A條?巴基斯坦STripFET⑩三功率MOSFET
文件頁數(shù)： 1/11頁
文件大?。?/td> 423K
代理商： STB60NH02L
1/11
September 2003
STB60NH02L
N-CHANNEL 24V - 0.0085
- 60A D2PAK
STripFET III POWER MOSFET
I
TYPICAL R
DS
(on) = 0.0085
@ 10 V
I
TYPICAL R
DS
(on) = 0.012
@ 5 V
I
R
DS(ON)
* Qg INDUSTRY’s BENCHMARK
I
CONDUCTION LOSSES REDUCED
I
SWITCHING LOSSES REDUCED
I
LOW THRESHOLD DEVICE
I
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION
The STB60NH02L utilizes the latest advanced design
rules of ST’s proprietary STripFET technology. This is
suitable fot the most demanding DC-DC converter
application where high efficiency is to be achieved.
APPLICATIONS
I
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC CONVERTES
TYPE
V
DSS
R
DS(on)
I
D
STB60NH02L
24 V
< 0.0105
60 A
1
3
D
2
PAK
TO-263
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STB60NH02LT4
ABSOLUTE MAXIMUM RATINGS
Symbol
V
spike(1)
Drain-source Voltage Rating
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM(2)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Derating Factor
E
AS (3)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
MARKING
B60NH02L
PACKAGE
TO-263
PACKAGING
TAPE & REEL
Parameter
Value
30
24
24
± 20
60
43
240
70
0.47
280
Unit
V
V
V
V
A
A
A
W
W/°C
mJ
-55 to 175
°C
相關(guān)PDF資料
PDF描述
STB6NA60 N-Channel Enhancement Mode Fast Power MOS Transistor(N溝道增強(qiáng)模式快速功率MOSFET)
STB6NA80 N-Channel Enhancement Mode Fast Power MOS Transistor(N溝道增強(qiáng)模式快速功率MOSFET)
STB6NC90Z-1 N-CHANNEL 900V - 1.55ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET
STP6NC90ZFP N-CHANNEL 900V - 1.55ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET
STB6NK60ZT4 N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH⑩Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STB60NH02L_04 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 24V - 0.0085 ohm - 60A D2PAK STripFET TM III POWER MOSFET
STB60NH02LT4 功能描述:MOSFET N-Ch 24 Volt 60 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB60NS04ZT4 功能描述:MOSFET N-Ch Clamped 60 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB6100 制造商:STMicroelectronics 功能描述:TUNERS SATELLITE 2.15GMHZ 32QFN - Trays 制造商:STMicroelectronics 功能描述:Tuners Satellite 2.15GMHz 32-Pin QFN Tray
STB6100_09 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8PSK/QPSK direct conversion tuner IC
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*