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參數(shù)資料
| 型號： | STB6NA80 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel Enhancement Mode Fast Power MOS Transistor(N溝道增強模式快速功率MOSFET) |
| 中文描述： | N溝道增強模式快速功率MOS晶體管（不適用溝道增強模式快速功率MOSFET的） |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 125K |
| 代理商： | STB6NA80 |
STB6NA80
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPICALR
DS(on)
= 1.68
±
30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHETESTED
REPETITIVE AVALANCHE DATA AT 100
o
C
LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
REDUCED THRESHOLD VOLTAGESPREAD
THROUGH-HOLE I2PAK (TO-262) POWER
PACKAGE IN TUBE(SUFFIX ”-1”)
SURFACE-MOUNTING D2PACK (TO-263)
POWERPACKAGE IN TUBE(NO SUFFIX)
OR IN TAPE & REEL (SUFFIX ”T4”)
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCHMODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
800
V
V
DGR
800
V
V
GS
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
±
30
5.7
V
I
D
I
D
A
3.6
A
I
DM
(
)
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
23
A
P
tot
125
W
Derating Factor
1
W/
o
C
o
C
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulsewidth limitedby safe operating area
150
TYPE
V
DSS
R
DS(on)
< 1.9
I
D
STB6NA80
800 V
5.7 A
October1995
123
1
3
I2PAK
TO-262
D2PAK
TO-263
1/10
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB6NA80-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.7A I(D) | TO-262VAR |
| STB6NA80T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.7A I(D) | TO-263AB |
| STB6NB50 | 功能描述:MOSFET N-Ch 500 Volt 6 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB6NB50-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 5.8A I(D) | TO-262AA |
| STB6NB50T4 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 5.8A I(D) | TO-263AB |
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