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參數(shù)資料
| 型號(hào)： | STB6NA80 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel Enhancement Mode Fast Power MOS Transistor(N溝道增強(qiáng)模式快速功率MOSFET) |
| 中文描述： | N溝道增強(qiáng)模式快速功率MOS晶體管（不適用溝道增強(qiáng)模式快速功率MOSFET的） |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 125K |
| 代理商： | STB6NA80 |
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 400 V
R
G
= 47
(see test circuit, figure 3)
V
DD
= 640 V
R
G
= 47
(see test circuit, figure 5)
V
DD
= 640 V
I
D
= 3 A
V
GS
= 10 V
35
95
45
125
ns
ns
(di/dt)
on
Turn-on Current Slope
I
D
= 6 A
V
GS
= 10 V
170
A/
μ
s
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
I
D
= 6 A
V
GS
= 10 V
58
8
27
78
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 640 V
R
G
= 47
(see test circuit, figure 5)
I
D
= 6 A
V
GS
= 10 V
90
25
125
120
35
165
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
5.7
23
A
A
V
SD
(
)
I
SD
= 6 A
V
GS
= 0
di/dt = 100 A/
μ
s
T
j
= 150
o
C
1.6
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 6 A
V
DD
= 100 V
(see test circuit, figure 5)
850
15
35
ns
μ
C
A
(
) Pulsed: Pulse duration =300
μ
s, duty cycle 1.5 %
(
) Pulse widthlimitedby safe operating area
Safe Operating Area
ThermalImpedance
STB6NA80
3/10
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