參數(shù)資料
型號： STP60NF06L
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 60V - 0.012 OHM - 60A TO-220/TO-220FP/D2PAK STripFET⑩ II POWER MOSFET
中文描述： N溝道60V的- 0.012歐姆-第60A條TO-220/TO-220FP/D2PAK STripFET⑩二功率MOSFET
文件頁數(shù)： 1/11頁
文件大?。?/td> 472K
代理商： STP60NF06L
1/11
July 2003
.
STB60NF06L
STP60NF06L STP60NF06LFP
N-CHANNEL 60V - 0.012
- 60A TO-220/TO-220FP/D
2
PAK
STripFET II POWER MOSFET
I
TYPICAL R
DS
(on) = 0.012
I
EXCEPTIONAL dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
APPLICATION ORIENTED
CHARACTERIZATION
I
175
o
C OPERATING RANGE
I
LOW THRESHOLD DRIVE
I
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4”)
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS
I
HIGH-EFFICIENCY DC-DC CONVERTERS
I
AUTOMOTIVE
TYPE
V
DSS
R
DS(on)
I
D
STB60NF06L
STP60NF06L
STP60NF06LFP
60 V
60 V
60 V
<0.014
<0.014
<0.014
60 A
60 A
60 A(*)
TO-220
1
2
3
TO-220FP
1
3
D
2
PAK
TO-263
(Suffix “T4”)
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol
(
)
Pulse width limited by safe operating area.
(*)
Refer to SOA for the max allowable current values on FP-type
due to Rth value
(1) I
≤
60A, di/dt
≤
600A/μs, V
≤
48V, T
j
≤
T
JMAX.
(2) Starting T
j
= 25
o
C, I
D
= 30A, V
DD
= 30V
Parameter
Value
Unit
STB60NF06L
STP60NF06L
STP60NF06LFP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
Gate- source Voltage
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Insulation Withstand Voltage (DC)
Storage Temperature
Operating Junction Temperature
60
60
± 15
V
V
V
A
A
A
W
60
42
240
110
0.73
60(*)
42(*)
240(*)
30
0.2
W/°C
V/ns
mJ
V
dv/dt
(1)
E
AS (2)
V
ISO
T
stg
T
j
20
320
------
2000
-55 to 175
°C
INTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料
PDF描述
STP60NF06LFP N-CHANNEL 60V - 0.012 OHM - 60A TO-220/TO-220FP/D2PAK STripFET⑩ II POWER MOSFET
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STB6NC90Z-1 N-CHANNEL 900V - 1.55ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STP60NF06LFP 功能描述:MOSFET N-Ch 60 Volt 60 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STP60NF10 功能描述:MOSFET N-Ch 100 Volt 80 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STP60NH2LL 功能描述:MOSFET N-CH 24V 40A TO-220 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:STripFET™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
STP60NS04Z 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL CLAMPED 10mohm - 60A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET
STP60NS04ZB 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel clamped - 10mohm - 60A - TO-220 Fully protected Mesh Overlay Power MOSFET
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