- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄380761 > STB60NF06L (意法半導(dǎo)體) N-CHANNEL 60V - 0.012 OHM - 60A TO-220/TO-220FP/D2PAK STripFET⑩ II POWER MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | STB60NF06L |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 60V - 0.012 OHM - 60A TO-220/TO-220FP/D2PAK STripFET⑩ II POWER MOSFET |
| 中文描述： | N溝道60V的- 0.012歐姆-第60A條TO-220/TO-220FP/D2PAK STripFET⑩二功率MOSFET |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 472K |
| 代理商： | STB60NF06L |
1/11
July 2003
.
STB60NF06L
STP60NF06L STP60NF06LFP
N-CHANNEL 60V - 0.012
- 60A TO-220/TO-220FP/D
2
PAK
STripFET II POWER MOSFET
I
TYPICAL R
DS
(on) = 0.012
I
EXCEPTIONAL dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
APPLICATION ORIENTED
CHARACTERIZATION
I
175
o
C OPERATING RANGE
I
LOW THRESHOLD DRIVE
I
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4”)
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS
I
HIGH-EFFICIENCY DC-DC CONVERTERS
I
AUTOMOTIVE
TYPE
V
DSS
R
DS(on)
I
D
STB60NF06L
STP60NF06L
STP60NF06LFP
60 V
60 V
60 V
<0.014
<0.014
<0.014
60 A
60 A
60 A(*)
TO-220
1
2
3
TO-220FP
1
3
D
2
PAK
TO-263
(Suffix “T4”)
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol
(
)
Pulse width limited by safe operating area.
(*)
Refer to SOA for the max allowable current values on FP-type
due to Rth value
(1) I
≤
60A, di/dt
≤
600A/μs, V
≤
48V, T
j
≤
T
JMAX.
(2) Starting T
j
= 25
o
C, I
D
= 30A, V
DD
= 30V
Parameter
Value
Unit
STB60NF06L
STP60NF06L
STP60NF06LFP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
Gate- source Voltage
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Insulation Withstand Voltage (DC)
Storage Temperature
Operating Junction Temperature
60
60
± 15
V
V
V
A
A
A
W
60
42
240
110
0.73
60(*)
42(*)
240(*)
30
0.2
W/°C
V/ns
mJ
V
dv/dt
(1)
E
AS (2)
V
ISO
T
stg
T
j
20
320
------
2000
-55 to 175
°C
INTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STP60NF06L | N-CHANNEL 60V - 0.012 OHM - 60A TO-220/TO-220FP/D2PAK STripFET⑩ II POWER MOSFET |
| STP60NF06LFP | N-CHANNEL 60V - 0.012 OHM - 60A TO-220/TO-220FP/D2PAK STripFET⑩ II POWER MOSFET |
| STB60NH02L | N-CHANNEL 24V - 0.0085 ohm - 60A DPAK STripFET⑩ III POWER MOSFET |
| STB6NA60 | N-Channel Enhancement Mode Fast Power MOS Transistor(N溝道增強(qiáng)模式快速功率MOSFET) |
| STB6NA80 | N-Channel Enhancement Mode Fast Power MOS Transistor(N溝道增強(qiáng)模式快速功率MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB60NF06L | 制造商:STMicroelectronics 功能描述:MOSFET N D2-PAK |
| STB60NF06L_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 60V - 0.012ヘ - 60A - TO-220/D2PAK/TO-220FP STripFET⑩ II Power MOSFET |
| STB60NF06LT4 | 功能描述:MOSFET N-Ch 60 Volt 60 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB60NF06T4 | 功能描述:MOSFET N-Ch 60 Volt 60 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB60NF10 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 100V - 0.019Ω - 80A - TO-220 - D2PAK - I2PAK STripFET? II Power MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。