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參數(shù)資料
| 型號(hào)： | STB5NA80 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel Enhancement Mode Power MOS Transistor(Ｎ溝道增強(qiáng)模式功率ＭＯＳ晶體管) |
| 中文描述： | N溝道增強(qiáng)模式功率MOS晶體管（不適用溝道增強(qiáng)模式功率馬鞍山晶體管） |
| 文件頁數(shù)： | 10/10頁 |
| 文件大?。?/td> | 131K |
| 代理商： | STB5NA80 |
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STB60N06-14 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STB60NE06L-16 | N-Channel 60V-0.014Ω-60A-D2PAK “SINGLE FEATURE SIZETM” Power MOSFET(N溝道功率MOSFET) |
| STB60NF03L | N-CHANNEL 30V - 0.008 ohm - 60A D2PAK STripFET POWER MOSFET |
| STB60NF06L | N-CHANNEL 60V - 0.012 OHM - 60A TO-220/TO-220FP/D2PAK STripFET⑩ II POWER MOSFET |
| STP60NF06L | N-CHANNEL 60V - 0.012 OHM - 60A TO-220/TO-220FP/D2PAK STripFET⑩ II POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB5NA80-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4.7A I(D) | TO-262AA |
| STB5NB60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 600V - 1.8ohm - 5A - I2PAK/D2PAK PowerMESH MOSFET |
| STB5NB60-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 5A I(D) | TO-251AA |
| STB5NB60T4 | 功能描述:MOSFET N-Ch 600 Volt 5 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB5NB80 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 800V - 1.8ohm - 5A -D2PAK PowerMESH] MOSFET |
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