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參數(shù)資料
| 型號(hào)： | STB5NA80 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel Enhancement Mode Power MOS Transistor(Ｎ溝道增強(qiáng)模式功率ＭＯＳ晶體管) |
| 中文描述： | N溝道增強(qiáng)模式功率MOS晶體管（不適用溝道增強(qiáng)模式功率馬鞍山晶體管） |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大?。?/td> | 131K |
| 代理商： | STB5NA80 |
STB5NA80
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 1.8
I
AVALANCHERUGGED TECHNOLOGY
I
100% AVALANCHE TESTED
I
REPETITIVE AVALANCHE DATA AT 100
o
C
I
LOW GATE CHARGE
I
VERYHIGH CURRENT CAPABILITY
I
APPLICATION ORIENTED
CHARACTERIZATION
I
THROUGH-HOLE I2PAK (TO-262) POWER
PACKAGEIN TUBE(SUFFIX ”-1”)
I
SURFACE-MOUNTING D2PACK (TO-263)
POWERPACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX ”T4”)
APPLICATIONS
I
HIGH CURRENT, HIGH SPEEDSWITCHING
I
SOLENOID ANDRELAY DRIVERS
I
REGULATORS
I
DC-DC & DC-AC CONVERTERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS,Etc.)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
800
V
V
DGR
800
±
30
4.7
V
V
GS
I
D
V
A
I
D
3
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
19
A
125
W
1
W/
o
C
o
C
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulse width limitedby safe operating area
150
TYPE
V
DSS
R
DS(on)
< 2.4
I
D
STB5NA80
800 V
4.7 A
March 1996
123
1
3
I2PAK
TO-262
D2PAK
TO-263
1/10
相關(guān)PDF資料 |
PDF描述 |
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| STB60N06-14 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STB60NE06L-16 | N-Channel 60V-0.014Ω-60A-D2PAK “SINGLE FEATURE SIZETM” Power MOSFET(N溝道功率MOSFET) |
| STB60NF03L | N-CHANNEL 30V - 0.008 ohm - 60A D2PAK STripFET POWER MOSFET |
| STB60NF06L | N-CHANNEL 60V - 0.012 OHM - 60A TO-220/TO-220FP/D2PAK STripFET⑩ II POWER MOSFET |
| STP60NF06L | N-CHANNEL 60V - 0.012 OHM - 60A TO-220/TO-220FP/D2PAK STripFET⑩ II POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB5NA80-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4.7A I(D) | TO-262AA |
| STB5NB60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 600V - 1.8ohm - 5A - I2PAK/D2PAK PowerMESH MOSFET |
| STB5NB60-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 5A I(D) | TO-251AA |
| STB5NB60T4 | 功能描述:MOSFET N-Ch 600 Volt 5 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB5NB80 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 800V - 1.8ohm - 5A -D2PAK PowerMESH] MOSFET |
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