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參數(shù)資料
| 型號： | SST32HF202-70-4C-L3KE |
| 廠商： | SILICON STORAGE TECHNOLOGY INC |
| 元件分類： | 存儲器 |
| 英文描述： | Multi-Purpose Flash (MPF) + SRAM ComboMemory |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PBGA48 |
| 封裝： | 6 X 8 MM, 1.40 HEIGHT, ROHS COMPLIANT, MO-210AB-1, LFBGA-48 |
| 文件頁數(shù)： | 9/30頁 |
| 文件大?。?/td> | 399K |
| 代理商： | SST32HF202-70-4C-L3KE |
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Data Sheet
Multi-Purpose Flash (MPF) + SRAM ComboMemory
SST32HF202 / SST32HF402 / SST32HF802
9
2005 Silicon Storage Technology, Inc.
S71209-06-000
5/05
TABLE
4: S
OFTWARE
C
OMMAND
S
EQUENCE
Command
Sequence
1st Bus
Write Cycle
Addr
1
5555H
5555H
5555H
5555H
5555H
XXH
5555H
2nd Bus
Write Cycle
Addr
1
2AAAH
2AAAH
2AAAH
2AAAH
2AAAH
3rd Bus
Write Cycle
Addr
1
5555H
5555H
5555H
5555H
5555H
4th Bus
Write Cycle
Addr
1
WA
2
5555H
5555H
5555H
5th Bus
Write Cycle
Addr
1
6th Bus
Write Cycle
Addr
1
Data
AAH
AAH
AAH
AAH
AAH
F0H
AAH
Data
55H
55H
55H
55H
55H
Data
A0H
80H
80H
80H
90H
Data
Data
AAH
AAH
AAH
Data
Data
Word-Program
Sector-Erase
Block-Erase
Chip-Erase
Software ID Entry
4,5
Software ID Exit
Software ID Exit
2AAAH
2AAAH
2AAAH
55H
55H
55H
SA
X3
BA
X3
5555H
30H
50H
10H
2AAAH
55H
5555H
F0H
T4.4 1209
1. Address format A
14
-A
0
(Hex),Address A
15
can be V
IL
or V
IH
, but no other value, for the Command sequence.
2. WA = Program Word address
3. SA
X
for Sector-Erase; uses A
MS
-A
11
address lines
BA
X
for Block-Erase; uses A
MS
-A
15
address lines
A
MS
= Most significant address
A
MS
= A
16
for SST32HF202, A
17
for SST32HF402, and A
18
for SST32HF802
4. The device does not remain in Software Product ID mode if powered down.
5. With A
MS
-A
1
= 0; SST Manufacturer’s ID = 00BFH, is read with A
0
= 0,
SST32HF202 Device ID = 2789H, is read with A
0
= 1,
SST32HF402 Device ID = 2780H, is read with A
0
= 1
SST32HF802 Device ID = 2781H, is read with A
0
= 1.
Absolute Maximum Stress Ratings
(Applied conditions greater than those listed under “Absolute Maximum
Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -20°C to +85°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +125°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to V
DD
+0.3V
Transient Voltage (<20 ns) on Any Pin to Ground Potential. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-2.0V to V
DD
+2.0V
Package Power Dissipation Capability (T
A
= 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Surface Mount Solder Reflow Temperature
1
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
Output Short Circuit Current
2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
1. Excluding certain with-Pb 32-PLCC units, all packages are 260
°
C capable in both non-Pb and with-Pb solder versions.
Certain with-Pb 32-PLCC package types are capable of 240
°
C for 10 seconds; please consult the factory for the latest information.
2. Outputs shorted for no more than one second. No more than one output shorted at a time.
O
PERATING
R
ANGE
Range
Commercial
Extended
Ambient Temp
0°C to +70°C
-20°C to +85°C
V
DD
2.7-3.3V
2.7-3.3V
AC C
ONDITIONS
OF
T
EST
Input Rise/Fall Time . . . . . . . . . . . . . . . 5 ns
Output Load . . . . . . . . . . . . . . . . . . . . . C
L
= 30 pF
See Figures 16 and 17
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| SST34HF1601-90-4C-L1P | 16 Mbit Concurrent SuperFlash + 8 Mbit SRAM ComboMemory |
| SST34HF1602D-70-4C-B1PE | 16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SST32HF202-70-4E-L3K | 功能描述:組合存儲器 2M FLASH 2M SRAM RoHS:否 制造商:Microchip Technology 組織:512 K x 16 電源電壓-最大: 電源電壓-最小: 最大工作溫度:+ 85 C 最小工作溫度:- 20 C 封裝 / 箱體:LFBGA-48 封裝:Tray |
| SST32HF202-70-4E-L3KE | 功能描述:組合存儲器 2M FLASH 2M SRAM RoHS:否 制造商:Microchip Technology 組織:512 K x 16 電源電壓-最大: 電源電壓-最小: 最大工作溫度:+ 85 C 最小工作溫度:- 20 C 封裝 / 箱體:LFBGA-48 封裝:Tray |
| SST32HF202-90-4C-L3K | 功能描述:組合存儲器 2M FLASH 2M SRAM RoHS:否 制造商:Microchip Technology 組織:512 K x 16 電源電壓-最大: 電源電壓-最小: 最大工作溫度:+ 85 C 最小工作溫度:- 20 C 封裝 / 箱體:LFBGA-48 封裝:Tray |
| SST32HF202-90-4C-L3KE | 功能描述:組合存儲器 2M FLASH 2M SRAM RoHS:否 制造商:Microchip Technology 組織:512 K x 16 電源電壓-最大: 電源電壓-最小: 最大工作溫度:+ 85 C 最小工作溫度:- 20 C 封裝 / 箱體:LFBGA-48 封裝:Tray |
| SST32HF202-90-4E-L3K | 功能描述:組合存儲器 2M FLASH 2M SRAM RoHS:否 制造商:Microchip Technology 組織:512 K x 16 電源電壓-最大: 電源電壓-最小: 最大工作溫度:+ 85 C 最小工作溫度:- 20 C 封裝 / 箱體:LFBGA-48 封裝:Tray |
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