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參數(shù)資料
| 型號： | SST32HF202-70-4C-L3KE |
| 廠商： | SILICON STORAGE TECHNOLOGY INC |
| 元件分類： | 存儲器 |
| 英文描述： | Multi-Purpose Flash (MPF) + SRAM ComboMemory |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PBGA48 |
| 封裝： | 6 X 8 MM, 1.40 HEIGHT, ROHS COMPLIANT, MO-210AB-1, LFBGA-48 |
| 文件頁數(shù)： | 1/30頁 |
| 文件大?。?/td> | 399K |
| 代理商： | SST32HF202-70-4C-L3KE |
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2005 Silicon Storage Technology, Inc.
S71209-06-000
1
5/05
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF and ComboMemory are trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
Data Sheet
FEATURES:
MPF + SRAM ComboMemory
– SST32HF202: 128K x16 Flash + 128K x16 SRAM
– SST32HF402: 256K x16 Flash + 128K x16 SRAM
– SST32HF802: 512K x16 Flash + 128K x16 SRAM
Single 2.7-3.3V Read and Write Operations
Concurrent Operation
– Read from or write to SRAM while
Erase/Program Flash
Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
Low Power Consumption:
– Active Current: 15 mA (typical) for
Flash or SRAM Read
– Standby Current: 20 μA (typical)
Flexible Erase Capability
– Uniform 2 KWord sectors
– Uniform 32 KWord size blocks
Fast Read Access Times:
– Flash: 70 ns
– SRAM: 70 ns
Latched Address and Data for Flash
Flash Fast Erase and Word-Program:
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Word-Program Time: 14 μs (typical)
– Chip Rewrite Time:
SST32HF202: 2 seconds (typical)
SST32HF402: 4 seconds (typical)
SST32HF802: 8 seconds (typical)
Flash Automatic Erase and Program Timing
– Internal V
PP
Generation
Flash End-of-Write Detection
– Toggle Bit
– Data# Polling
CMOS I/O Compatibility
JEDEC Standard Command Set
Conforms to Flash pinout
Packages Available
– 48-ball LFBGA (6mm x 8mm)
– 48-ball LBGA (10mm x 12mm)
(SST32HF802 only)
All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST32HF202/402/802 ComboMemory devices inte-
grate a 128K x16, 256K x16, 512K x16 CMOS flash mem-
ory bank with a 128K x16 CMOS SRAM memory bank in a
Multi-Chip Package (MCP), manufactured with SST’s pro-
prietary, high performance SuperFlash technology.
Featuring high performance Word-Program, the flash
memory bank provides a maximum Word-Program time of
14 μsec. The entire flash memory bank can be erased and
programmed word-by-word in typically 2 seconds for the
SST32HF202, 4 seconds for the SST32HF402, and 8 sec-
onds for the SST32HF802, when using interface features
such as Toggle Bit or Data# Polling to indicate the comple-
tion of Program operation. To protect against inadvertent
flash write, the SST32HF202/402/802 devices contain on-
chip hardware and software data protection schemes. The
SST32HF202/402/802 devices offer a guaranteed endur-
ance of 10,000 cycles. Data retention is rated at greater
than 100 years.
The SST32HF202/402/802 devices consist of two inde-
pendent memory banks with respective bank enable sig-
nals. The Flash and SRAM memory banks are
superimposed in the same memory address space. Both
memory banks share common address lines, data lines,
WE# and OE#. The memory bank selection is done by
memory bank enable signals. The SRAM bank enable sig-
nal, BES# selects the SRAM bank. The flash memory
bank enable signal, BEF# selects the flash memory bank.
The WE# signal has to be used with Software Data Protec-
tion (SDP) command sequence when controlling the Erase
and Program operations in the flash memory bank. The
SDP command sequence protects the data stored in the
flash memory bank from accidental alteration.
The SST32HF202/402/802 provide the added functionality
of being able to simultaneously read from or write to the
SRAM bank while erasing or programming in the flash
memory bank. The SRAM memory bank can be read or
written while the flash memory bank performs Sector-
Erase, Bank-Erase, or Word-Program concurrently. All
flash memory Erase and Program operations will automati-
cally latch the input address and data signals and complete
the operation in background without further input stimulus
requirement. Once the internally controlled Erase or Pro-
gram cycle in the flash bank has commenced, the SRAM
bank can be accessed for Read or Write.
Multi-Purpose Flash (MPF) + SRAM ComboMemory
SST32HF202 / SST32HF402 / SST32HF802
SST32HF202 / 402 / 8022Mb Flash + 2Mb SRAM, 4Mb Flash + 2Mb SRAM, 8Mb Flash + 2Mb SRAM
(x16) MCP ComboMemory
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SST32HF202-70-4E-L3KE | Multi-Purpose Flash (MPF) + SRAM ComboMemory |
| SST34HF1601-70-4C-L1P | 16 Mbit Concurrent SuperFlash + 8 Mbit SRAM ComboMemory |
| SST34HF1601-90-4C-L1P | 16 Mbit Concurrent SuperFlash + 8 Mbit SRAM ComboMemory |
| SST34HF1602D-70-4C-B1PE | 16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory |
| SST34HF1602C | 16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SST32HF202-70-4E-L3K | 功能描述:組合存儲器 2M FLASH 2M SRAM RoHS:否 制造商:Microchip Technology 組織:512 K x 16 電源電壓-最大: 電源電壓-最小: 最大工作溫度:+ 85 C 最小工作溫度:- 20 C 封裝 / 箱體:LFBGA-48 封裝:Tray |
| SST32HF202-70-4E-L3KE | 功能描述:組合存儲器 2M FLASH 2M SRAM RoHS:否 制造商:Microchip Technology 組織:512 K x 16 電源電壓-最大: 電源電壓-最小: 最大工作溫度:+ 85 C 最小工作溫度:- 20 C 封裝 / 箱體:LFBGA-48 封裝:Tray |
| SST32HF202-90-4C-L3K | 功能描述:組合存儲器 2M FLASH 2M SRAM RoHS:否 制造商:Microchip Technology 組織:512 K x 16 電源電壓-最大: 電源電壓-最小: 最大工作溫度:+ 85 C 最小工作溫度:- 20 C 封裝 / 箱體:LFBGA-48 封裝:Tray |
| SST32HF202-90-4C-L3KE | 功能描述:組合存儲器 2M FLASH 2M SRAM RoHS:否 制造商:Microchip Technology 組織:512 K x 16 電源電壓-最大: 電源電壓-最小: 最大工作溫度:+ 85 C 最小工作溫度:- 20 C 封裝 / 箱體:LFBGA-48 封裝:Tray |
| SST32HF202-90-4E-L3K | 功能描述:組合存儲器 2M FLASH 2M SRAM RoHS:否 制造商:Microchip Technology 組織:512 K x 16 電源電壓-最大: 電源電壓-最小: 最大工作溫度:+ 85 C 最小工作溫度:- 20 C 封裝 / 箱體:LFBGA-48 封裝:Tray |
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