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參數(shù)資料
| 型號(hào)： | SST29VE010-200-4C-EHE |
| 廠商： | SILICON STORAGE TECHNOLOGY INC |
| 元件分類： | PROM |
| 英文描述： | 1 Mbit (128K x8) Page-Write EEPROM |
| 中文描述： | 128K X 8 EEPROM 3V, 200 ns, PDSO32 |
| 封裝： | 8 X 20 MM, ROHS COMLIANT, MO-142BD, TSOP-32 |
| 文件頁(yè)數(shù)： | 7/30頁(yè) |
| 文件大?。?/td> | 417K |
| 代理商： | SST29VE010-200-4C-EHE |
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Data Sheet
1 Mbit Page-Write EEPROM
SST29EE010 / SST29VE010
7
2005 Silicon Storage Technology, Inc.
S71061-11-000
9/05
Note:
This product supports both the JEDEC standard three-byte command code sequence and SST’s original six-byte command code
sequence. For new designs, SST recommends that the three-byte command code sequence be used.
TABLE
4: S
OFTWARE
C
OMMAND
S
EQUENCE
Command
Sequence
Software
Data Protect Enable
& Page-Write
Software Chip-Erase
3
Software ID Entry
4,5
Software ID Exit
Alternate
Software ID Entry
6
1st Bus
Write Cycle
Addr
1
5555H
2nd Bus
Write Cycle
Addr
1
2AAAH
3rd Bus
Write Cycle
Addr
1
5555H
4th Bus
Write Cycle
Addr
1
Addr
2
5th Bus
Write Cycle
Addr
1
6th Bus
Write Cycle
Addr
1
Data
AAH
Data
55H
Data
A0H
Data
Data
Data
Data
5555H
5555H
5555H
5555H
AAH
AAH
AAH
AAH
2AAAH
2AAAH
2AAAH
2AAAH
55H
55H
55H
55H
5555H
5555H
5555H
5555H
80H
90H
F0H
80H
5555H
AAH
2AAAH
55H
5555H
10H
5555H
AAH
2AAAH
55H
5555H
60H
T4.3 1061
1. Address format A
14
-A
0
(Hex), Addresses A
15
and A
16
can be V
IL
or V
IH
, but no other value.
2. Page-Write consists of loading up to 128 Bytes (A
6
-A
0
)
3. The software Chip-Erase function is not supported by the industrial temperature part.
Please contact SST if you require this function for an industrial temperature part.
4. The device does not remain in Software Product ID mode if powered down.
5. With A
14
-A
1
= 0;
SST Manufacturer’s ID = BFH, is read with A
0
= 0,
SST29EE010 Device ID = 07H, is read with A
0
= 1
SST29VE010 Device ID = 08H, is read with A
0
= 1
6. Alternate six-byte Software Product ID command code
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SST29VE010-200-4C-NHE | 1 Mbit (128K x8) Page-Write EEPROM |
| SST29VE010-200-4C-WHE | 1 Mbit (128K x8) Page-Write EEPROM |
| SST29VE010-200-4I-EHE | 1 Mbit (128K x8) Page-Write EEPROM |
| SST29VE010-200-4I-NHE | 1 Mbit (128K x8) Page-Write EEPROM |
| SST29VE010-200-4I-WHE | 1 Mbit (128K x8) Page-Write EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SST29VE010-200-4C-NH | 功能描述:閃存 128K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST29VE010-200-4C-NHE | 功能描述:閃存 128K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST29VE010-200-4C-WH | 功能描述:閃存 128K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST29VE010-200-4C-WHE | 功能描述:閃存 128K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST29VE010-200-4I-EH | 功能描述:閃存 U 804-29VE01020CEH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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