參數(shù)資料
型號(hào)： SST29VE010-200-4C-EHE
廠商： SILICON STORAGE TECHNOLOGY INC
元件分類： PROM
英文描述： 1 Mbit (128K x8) Page-Write EEPROM
中文描述： 128K X 8 EEPROM 3V, 200 ns, PDSO32
封裝： 8 X 20 MM, ROHS COMLIANT, MO-142BD, TSOP-32
文件頁數(shù)： 4/30頁
文件大?。?/td> 417K
代理商： SST29VE010-200-4C-EHE
4
Data Sheet
1 Mbit Page-Write EEPROM
SST29EE010 / SST29VE010
2005 Silicon Storage Technology, Inc.
S71061-11-000
9/05
Please refer to the following Application Notes for more
information on using SDP:
Protecting Against Unintentional Writes When
Using Single Power Supply Flash Memories
The Proper Use of JEDEC Standard Software
Data Protection
Product Identification
The Product Identification mode identifies the device
as the SST29EE/VE010 and manufacturer as SST.
This mode is accessed via software. For details, see
Table 4, Figure 11 for the software ID entry and read
timing diagram and Figure 18, for the ID entry com-
mand sequence flowchart.
Product Identification Mode Exit
In order to return to the standard Read mode, the Software
Product Identification mode must be exited. Exiting is
accomplished by issuing the Software ID Exit (reset) opera-
tion, which returns the device to the Read operation. The
Reset operation may also be used to reset the device to the
Read mode after an inadvertent transient condition that
apparently causes the device to behave abnormally, e.g.,
not read correctly. See Table 4 for software command
codes, Figure 12 for timing waveform, and Figure 18 for a
flowchart.
TABLE
1: P
RODUCT
I
DENTIFICATION
Address
0000H
Data
BFH
Manufacturer’s ID
Device ID
SST29EE010
SST29VE010
0001H
0001H
07H
08H
T1.4 1061
Y-Decoder and Page Latches
I/O Buffers and Data Latches
1061 B1.0
Address Buffer & Latches
X-Decoder
DQ7 - DQ0
A16 - A0
WE#
OE#
CE#
SuperFlash
Memory
Control Logic
F
UNCTIONAL
B
LOCK
D
IAGRAM
相關(guān)PDF資料
PDF描述
SST29VE010-200-4C-NHE 1 Mbit (128K x8) Page-Write EEPROM
SST29VE010-200-4C-WHE 1 Mbit (128K x8) Page-Write EEPROM
SST29VE010-200-4I-EHE 1 Mbit (128K x8) Page-Write EEPROM
SST29VE010-200-4I-NHE 1 Mbit (128K x8) Page-Write EEPROM
SST29VE010-200-4I-WHE 1 Mbit (128K x8) Page-Write EEPROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SST29VE010-200-4C-NH 功能描述:閃存 128K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST29VE010-200-4C-NHE 功能描述:閃存 128K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST29VE010-200-4C-WH 功能描述:閃存 128K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST29VE010-200-4C-WHE 功能描述:閃存 128K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST29VE010-200-4I-EH 功能描述:閃存 U 804-29VE01020CEH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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