參數(shù)資料
型號(hào): SST29VE010-200-4C-EHE
廠商: SILICON STORAGE TECHNOLOGY INC
元件分類: PROM
英文描述: 1 Mbit (128K x8) Page-Write EEPROM
中文描述: 128K X 8 EEPROM 3V, 200 ns, PDSO32
封裝: 8 X 20 MM, ROHS COMLIANT, MO-142BD, TSOP-32
文件頁數(shù): 25/30頁
文件大?。?/td> 417K
代理商: SST29VE010-200-4C-EHE
Data Sheet
1 Mbit Page-Write EEPROM
SST29EE010 / SST29VE010
25
2005 Silicon Storage Technology, Inc.
S71061-11-000
9/05
Valid combinations for SST29EE010
SST29EE010-70-4C-NH
SST29EE010-70-4C-NHE
SST29EE010-90-4C-NH
SST29EE010-90-4C-NHE
SST29EE010-70-4I-NH
SST29EE010-70-4I-NHE
SST29EE010-70-4C-WH
SST29EE010-70-4C-WHE
SST29EE010-90-4C-WH
SST29EE010-90-4C-WHE
SST29EE010-70-4I-WH
SST29EE010-70-4I-WHE
SST29EE010-70-4C-EH
SST29EE010-70-4C-EHE
SST29EE010-90-4C-EH
SST29EE010-90-4C-EHE
SST29EE010-70-4I-EH
SST29EE010-70-4I-EHE
SST29EE010-70-4C-PH
SST29EE010-70-4C-PHE
SST29EE010-90-4C-PH
Valid combinations for SST29VE010
SST29VE010-150-4C-NH
SST29VE010-150-4C-NHE SST29VE010-150-4C-WHE SST29VE010-150-4C-EHE
SST29VE010-200-4C-NH
SST29VE010-200-4C-WH
SST29VE010-200-4C-NHE SST29VE010-200-4C-WHE SST29VE010-200-4C-EHE
SST29VE010-150-4I-NH
SST29VE010-150-4I-WH
SST29VE010-150-4I-NHE
SST29VE010-150-4I-WHE
SST29VE010-200-4I-NH
SST29VE010-200-4I-WH
SST29VE010-200-4I-NHE
SST29VE010-200-4I-WHE
SST29VE010-150-4C-WH
SST29VE010-150-4C-EH
SST29VE010-200-4C-EH
SST29VE010-150-4I-EH
SST29VE010-150-4I-EHE
SST29VE010-200-4I-EH
SST29VE010-200-4I-EHE
Note:
Valid combinations are those products in mass production or will be in mass production. Consult your SST sales
representative to confirm availability of valid combinations and to determine availability of new combinations.
Note:
The software Chip-Erase function is not supported by the industrial temperature part.
Please contact SST if this function is required in an industrial temperature part.
相關(guān)PDF資料
PDF描述
SST29VE010-200-4C-NHE 1 Mbit (128K x8) Page-Write EEPROM
SST29VE010-200-4C-WHE 1 Mbit (128K x8) Page-Write EEPROM
SST29VE010-200-4I-EHE 1 Mbit (128K x8) Page-Write EEPROM
SST29VE010-200-4I-NHE 1 Mbit (128K x8) Page-Write EEPROM
SST29VE010-200-4I-WHE 1 Mbit (128K x8) Page-Write EEPROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SST29VE010-200-4C-NH 功能描述:閃存 128K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST29VE010-200-4C-NHE 功能描述:閃存 128K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST29VE010-200-4C-WH 功能描述:閃存 128K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST29VE010-200-4C-WHE 功能描述:閃存 128K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST29VE010-200-4I-EH 功能描述:閃存 U 804-29VE01020CEH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel