參數(shù)資料
型號: SST29VE010-200-4C-EHE
廠商: SILICON STORAGE TECHNOLOGY INC
元件分類: PROM
英文描述: 1 Mbit (128K x8) Page-Write EEPROM
中文描述: 128K X 8 EEPROM 3V, 200 ns, PDSO32
封裝: 8 X 20 MM, ROHS COMLIANT, MO-142BD, TSOP-32
文件頁數(shù): 6/30頁
文件大?。?/td> 417K
代理商: SST29VE010-200-4C-EHE
6
Data Sheet
1 Mbit Page-Write EEPROM
SST29EE010 / SST29VE010
2005 Silicon Storage Technology, Inc.
S71061-11-000
9/05
TABLE
2: P
IN
D
ESCRIPTION
Symbol
A
16
-A
7
A
6
-A
0
DQ
7
-DQ
0
Pin Name
Row Address Inputs
Column Address Inputs
Data Input/output
Functions
To provide memory addresses. Row addresses define a page for a Write cycle.
Column Addresses are toggled to load page data
To output data during Read cycles and receive input data during Write cycles.
Data is internally latched during a Write cycle.
The outputs are in tri-state when OE# or CE# is high.
To activate the device when CE# is low.
To gate the data output buffers.
To control the Write operations.
To provide:
5.0V supply (4.5-5.5V) for SST29EE010
2.7V supply (2.7-3.6V) for SST29VE010
CE#
OE#
WE#
V
DD
Chip Enable
Output Enable
Write Enable
Power Supply
V
SS
NC
Ground
No Connection
Unconnected pins.
T2.3 1061
TABLE
3: O
PERATION
M
ODES
S
ELECTION
Mode
Read
Page-Write
Standby
Write Inhibit
CE#
V
IL
V
IL
V
IH
X
X
V
IL
OE#
V
IL
V
IH
X
1
V
IL
X
V
IH
WE#
V
IH
V
IL
X
X
V
IH
V
IL
DQ
D
OUT
D
IN
High Z
High Z/ D
OUT
High Z/ D
OUT
D
IN
Address
A
IN
A
IN
X
X
X
A
IN,
See Table 4
1. X can be V
IL
or V
IH
, but no other value.
2. Device ID = 07H for SST29EE010 and 08H for SST29VE010
Software Chip-Erase
Product Identification
Software Mode
V
IL
V
IH
V
IL
Manufacturer’s ID (BFH)
Device ID
2
See Table 4
SDP Enable Mode
SDP Disable Mode
V
IL
V
IL
V
IH
V
IH
V
IL
V
IL
See Table 4
See Table 4
T3.4 1061
相關(guān)PDF資料
PDF描述
SST29VE010-200-4C-NHE 1 Mbit (128K x8) Page-Write EEPROM
SST29VE010-200-4C-WHE 1 Mbit (128K x8) Page-Write EEPROM
SST29VE010-200-4I-EHE 1 Mbit (128K x8) Page-Write EEPROM
SST29VE010-200-4I-NHE 1 Mbit (128K x8) Page-Write EEPROM
SST29VE010-200-4I-WHE 1 Mbit (128K x8) Page-Write EEPROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SST29VE010-200-4C-NH 功能描述:閃存 128K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST29VE010-200-4C-NHE 功能描述:閃存 128K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST29VE010-200-4C-WH 功能描述:閃存 128K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST29VE010-200-4C-WHE 功能描述:閃存 128K X 8 200ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST29VE010-200-4I-EH 功能描述:閃存 U 804-29VE01020CEH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel