參數(shù)資料
型號(hào): SN74V3690-15PEU
廠商: Texas Instruments, Inc.
英文描述: 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES
中文描述: 的3.3V的CMOS先入先出存儲(chǔ)器
文件頁(yè)數(shù): 32/50頁(yè)
文件大?。?/td> 729K
代理商: SN74V3690-15PEU
S
1
3
×
×
×
×
×
×
S
3
P
tOE
WCLK
RCLK
WD
tENH
tENS
WEN
tsk1
(see Note A)
1
2
tDH
tDS
D0
D17
tENS
tENS
REN
OE
tOHZ
tA
tA
tA
tA
tA
tA
tREF
Q0
Q17
tPAES
tHF
tPAFS
tWFF
tWFF
OR
PAE
HF
PAF
IR
W1
W1
W2
W3
W(m+3)
Wm+2
W(m+4)
W
W
W(D-n-1)
W(D-n)
W(D-n+2)
W(D-1)
WD
NOTES: A. tsk1 is the minimum time between a rising RCLK edge and a rising WCLK edge to ensure that IR goes low after one WCLK cycle + tWFF. If the time between the rising
edge of RLCK and the rising edge of WCLK is less than tsk1, IR assertion may be delayed an additional WCLK cycle.
B. tsk2 is the minimum time between a rising RCLK edge and a rising WCLK edge to ensure that PAF to goes high after one WCLK cycle + tPAFS. If the time between the
rising edge of RCLK and the rising edge of WCLK is less than tsk2, PAF deassertion may be delayed an additional WCLK cycle.
C. LD = high
D. n = PAE offset, m = PAF offset, D = maximum FIFO depth
E. D = 1025 for the SN74V3640, D = 2049 for the SN74V3650, D = 8193 for the SN74V3670, D = 16385 for the SN74V3680, and D = 32769 for the SN74V3690
tsk2
(see Note B)
2
1
W(D-n+1)
D
1
2
1
D
1
2
2
Figure 7. Read Timing (FWFT Mode)
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