參數(shù)資料
型號: SI4832DY-T1
廠商: Vishay Intertechnology,Inc.
元件分類: MOSFETs
英文描述: Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
中文描述: 雙N溝道30 V的(副)MOSFET的肖特基二極管
文件頁數(shù): 3/5頁
文件大小: 47K
代理商: SI4832DY-T1
Si4832DY
Vishay Siliconix
Document Number: 71774
S-31062—Rev. F, 26-May-03
www.vishay.com
3
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0.6
0.8
1.0
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
0
5
10
15
20
25
V
DS
= 15 V
I
D
= 9 A
V
GS
= 10 V
I
D
Output Characteristics
Transfer Characteristics
Gate Charge
On-Resistance vs. Drain Current
V
DS
- Drain-to-Source Voltage (V)
-
I
D
V
GS
- Gate-to-Source Voltage (V)
-
I
D
-
Q
g
- Total Gate Charge (nC)
V
DS
- Drain-to-Source Voltage (V)
C
V
G
-
r
D
)
I
D
- Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
T
J
- Junction Temperature ( C)
(
-
r
D
)
0
10
20
30
40
50
0
1
2
3
4
5
0
300
600
900
1200
1500
1800
0
5
10
15
20
25
30
0
10
20
30
40
50
0
1
2
3
4
5
0.00
0.02
0.04
0.06
0.08
0.10
0
10
20
30
40
50
V
GS
= 10 thru 5 V
T
C
= 125 C
-55 C
C
rss
C
oss
C
iss
V
GS
= 10 V
V
GS
= 4.5 V
3 V
25 C
4 V
相關PDF資料
PDF描述
SI4832DY Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI4833DY P-Channel 30-V (D-S) MOSFET with Schottky Diode
SI4835BDY-T1 P-Channel 30-V (D-S) MOSFET
SI4835BDY P-Channel 30-V (D-S) MOSFET
SI4835DY P-Channel Logic Level PowerTrench MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
SI4832DY-T1-E3 功能描述:MOSFET 30V 9A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4833ADY-T1-E3 功能描述:MOSFET 30 Volt 4.6 Amp 2.75 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4833ADY-T1-GE3 功能描述:MOSFET 30V 4.6A 2.75W 72mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4833DY 功能描述:MOSFET 30V 3.5A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4833DY_07 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET with Schottky Diode