參數(shù)資料
型號(hào): SI4832DY
廠商: Vishay Intertechnology,Inc.
元件分類: MOSFETs
英文描述: Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
中文描述: 雙N溝道30 V的(副)MOSFET的肖特基二極管
文件頁(yè)數(shù): 1/5頁(yè)
文件大小: 47K
代理商: SI4832DY
Si4832DY
Vishay Siliconix
Document Number: 71774
S-31062—Rev. F, 26-May-03
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
30
0.018 @ V
GS
= 10 V
0.028 @ V
GS
= 4.5 V
9
7.3
SCHOTTKY PRODUCT SUMMARY
V
DS
(V)
V
SD
(V)
Diode Forward Voltage
I
F
(A)
30
0.53 V @ 3.0 A
4.0
S
D
S
D
S
D
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
N-Channel MOSFET
G
S
Schottky Diode
D
Ordering Information:
Si4832DY
Si4832DY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
10 sec
Steady State
Drain-Source Voltage (MOSFET)
V
DS
30
Reverse Voltage (Schottky)
30
V
Gate-Source Voltage (MOSFET)
V
GS
20
Continuous Drain Current
(T
J
= 150 C) (MOSFET)a
, b
T
A
= 25 C
I
D
9
6.9
T
A
= 70 C
7.5
5.6
Pulsed Drain Current (MOSFET)
I
DM
I
S
I
F
I
FM
50
A
Continuous Source Current (MOSFET Diode Conduction)a
, b
2.1
1.2
Average Foward Current (Schottky)
4.0
2.3
Pulsed Foward Current (Schottky)
50
Maximum Power Dissipation (MOSFET)
a b
T
A
= 25 C
T
A
= 70 C
T
A
= 25 C
T
A
= 70 C
2.5
1.4
P
D
1.6
0.9
W
Maximum Power Dissipation (Schottky)
a, b
2.0
1.2
1.3
0.8
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Device
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient (t
t A bi
10 sec)
a
MOSFET
40
50
Schottky
R
thJA
50
60
C/W
Maximum Junction to Ambient (t steady state)
Maximum Junction-to-Ambient (t = steady state)
a
MOSFET
70
90
Schottky
80
100
Notes
a.
b.
Surface Mounted on FR4 Board.
t
10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
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