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參數(shù)資料
| 型號(hào)： | SI4833DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 中文描述： | P通道30 - V的肖特基二極管（副）MOSFET的 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 63K |
| 代理商： | SI4833DY |
Si4833DY
Vishay Siliconix
Document Number: 70796
S-56941—Rev. B, 02-Nov-98
www.vishay.com FaxBack 408-970-5600
2-1
P-Channel 30-V (D-S) MOSFET with Schottky Diode
V
DS
(V)
r
DS(on)
( )
I
D
(A)
–30
0.085 @ V
GS
= –10 V
0.180 @ V
GS
= –4.5 V
3.5
2.5
V
KA
(V)
V
F
(V)
Diode Forward Voltage
I
F
(A)
30
0.5 V @ 1.0 A
1.4
A
K
K
S
D
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
A
S
G
D
K
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage (MOSFET)
V
DS
V
KA
–30
V
Reverse Voltage (Schottky)
30
Gate-Source Voltage (MOSFET)
V
GS
20
Continuous Drain Current
(T
J
= 150 C) (MOSFET)
a, b
T
A
= 25 C
I
D
3.5
A
T
A
= 70 C
2.8
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)
a, b
I
DM
I
S
I
F
I
FM
20
– 1.7
Average Foward Current (Schottky)
1.4
Pulsed Foward Current (Schottky)
30
Maximum Power Dissipation (MOSFET)
a, b
T
A
= 25 C
T
A
= 70 C
T
A
= 25 C
T
A
= 70 C
P
D
2
W
1.3
Maximum Power Dissipation (Schottky)
a, b
1.9
1.2
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Parameter
Device
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient (t
10 sec)
a
MOSFET
R
thJA
62.5
C/W
Schottky
65
Maximum Junction-to-Ambient (t = steady state)
a
MOSFET
90
Schottky
92
Notes
a.
b.
Surface Mounted on FR4 Board.
t
10 sec.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4833DY_07 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI4833DY-E3 | 功能描述:MOSFET 30V 3.5A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4833DYT1 | 制造商:VISHAY 功能描述:30V 3.5A 2W |
| SI4833DY-T1 | 功能描述:MOSFET 30V 3.5A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4833DY-T1-E3 | 功能描述:MOSFET 30V 3.5A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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