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參數資料
| 型號： | SI4832DY-T1 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 中文描述： | 雙N溝道30 V的（副）MOSFET的肖特基二極管 |
| 文件頁數： | 2/5頁 |
| 文件大小： | 47K |
| 代理商： | SI4832DY-T1 |
Si4832DY
Vishay Siliconix
www.vishay.com
2
Document Number: 71774
S-31062—Rev. F, 26-May-03
MOSFET + SCHOTTKY SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
1
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
V
DS
= 30 V, V
GS
= 0 V
0.007
0.100
Zero Gate Voltage Drain Current
(MOSFET + Schottky)
I
DSS
V
DS
= 30 V, V
GS
= 0 V, T
J
= 100 C
1.5
10
mA
V
DS
= 30 V, V
GS
= 0 V, T
J
= 125 C
6.5
20
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V
20
A
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 9 A
0.012
0.018
V
GS
= 4.5 V, I
D
=
7.3 A
0.019
0.028
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 9 A
23
S
Schottky Diode Forward Voltage
a
V
SD
I
S
= 3.0 A, V
GS
= 0 V
0.493
0.53
V
I
S
= 3.0 A, V
GS
= 0 V, T
J
= 125 C
0.40
0.47
Dynamic
b
Total Gate Charge
Q
g
13
24
Gate-Source Charge
Q
gs
V
DS
= 15 V,
V
GS
= 5 V, I
D
= 9 A
4
nC
Gate-Drain Charge
Q
gd
5.6
Gate Resistance
R
g
0.2
1.0
2.4
Turn-On Delay Time
t
d(on)
16
25
Rise Time
t
r
V
= 15 V, R
= 15
1 A, V
GEN
= 10 V, R
G
= 6
10
20
Turn-Off Delay Time
t
d(off)
I
D
35
50
ns
Fall Time
t
f
13
20
Source-Drain Reverse Recovery Time
t
rr
I
F
= 3.0 A, di/dt = 100 A/ s
40
70
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
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相關代理商/技術參數 |
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| SI4832DY-T1-E3 | 功能描述:MOSFET 30V 9A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4833ADY-T1-E3 | 功能描述:MOSFET 30 Volt 4.6 Amp 2.75 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4833ADY-T1-GE3 | 功能描述:MOSFET 30V 4.6A 2.75W 72mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4833DY | 功能描述:MOSFET 30V 3.5A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4833DY_07 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET with Schottky Diode |
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