參數(shù)資料
型號: SI2305DS
廠商: Vishay Intertechnology,Inc.
英文描述: P-Ch 20-V (D-S) 1.25-W, 2.5-V MOSFET
中文描述: P溝道20V(D-S)1.25瓦,2.5V,MOSFET
文件頁數(shù): 3/4頁
文件大?。?/td> 54K
代理商: SI2305DS
Si2305DS
Vishay Siliconix
Document Number: 70833
S-56947—Rev. C, 28-Dec-98
www.vishay.com FaxBack 408-970-5600
2-3
0
2
4
6
8
10
12
0
0.5
1.0
1.5
2.0
2.5
0
0.05
0.10
0.15
0.20
0.25
0.30
0
2
4
6
8
10
12
0
2
4
6
8
10
12
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
1
2
3
4
5
0
2
4
6
8
10
0.6
0.8
1.0
1.2
1.4
–50
–25
0
25
50
75
100
125
150
0
400
800
1200
1600
2000
0
2
4
6
8
V
GS
= 4.5 thru 2.5 V
25 C
T
C
= –55 C
C
rss
C
oss
C
iss
V
DS
= 4 V
I
D
= 3.5 A
V
GS
= 4.5 V
I
D
= 3.5 A
V
GS
= 4.5 V
V
GS
= 2.5 V
1, 0.5 V
125 C
1.5 V
Output Characteristics
Transfer Characteristics
Gate Charge
On-Resistance vs. Drain Current
V
DS
– Drain-to-Source Voltage (V)
I
D
V
GS
– Gate-to-Source Voltage (V)
I
D
Q
g
– Total Gate Charge (nC)
V
DS
– Drain-to-Source Voltage (V)
C
V
G
r
D
)
I
D
– Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
T
J
– Junction Temperature ( C)
(
r
D
)
V
GS
= 1.8 V
2 V
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