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參數(shù)資料
| 型號： | SI2306DS-T1 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 中文描述： | 雙N溝道30 V的（副）MOSFET的肖特基二極管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 57K |
| 代理商： | SI2306DS-T1 |
FEATURES
TrenchFET Power MOSFET
100% R
g
Tested
Si2306DS
Vishay Siliconix
Document Number: 70827
S-31873—Rev. C, 15-Sep-03
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
30
0.057 @ V
GS
= 10 V
0.094 @ V
GS
= 4.5 V
3.5
2.8
-
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
Si2306DS (A6)*
*Marking Code
Ordering Information: Si2306DS-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a, b
T
A
= 25 C
I
D
3.5
T
A
= 70 C
2.8
A
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a, b
I
DM
I
S
16
1.25
Maximum Power Dissipation
a, b
T
A
= 25 C
T
A
= 70 C
P
D
1.25
W
0.80
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction to Ambient
Maximum Junction-to-Ambient
a
t
5 sec
R
thJA
100
C/W
Steady State
130
Notes
a.
b.
Surface Mounted on FR4 Board.
t
5 sec.
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| SI2309DS | P-Channel 60-V (D-S) MOSFET |
| SI2311DS | P-channel 1.25-W, VGS = 1.8 V MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI2306DS-T1-E3 | 功能描述:MOSFET 30V 3.5A 1.25 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI2306DS-T3 | 制造商:Vishay Intertechnologies 功能描述:30V, N-CHANNEL, 94mohm 4.5V RATED TR |
| SI2307 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:30V P-Channel Enhancement-Mode MOSFET |
| SI2307BDS | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET |
| SI2307BDS-T1 | 制造商:VISH 功能描述: 制造商:VISHAY/SILICONIX 功能描述: |
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