- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄365546 > SI2314EDS (Vishay Intertechnology,Inc.) N-Channel 20-V (D-S) MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | SI2314EDS |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 20-V (D-S) MOSFET |
| 中文描述： | N溝道20 - V（下局副局長(zhǎng)）MOSFET的 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 41K |
| 代理商： | SI2314EDS |
TrenchFET Power MOSFET
ESD Protected: 3000 V
LI-lon Battery Protection
Si2314EDS
Vishay Siliconix
New Product
Document Number: 71611
S-04683—Rev. B, 10-Sep-01
www.vishay.com
1
N-Channel 20-V (D-S) MOSFET
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.033 @ V
GS
= 4.5 V
4.9
20
0.040 @ V
GS
= 2.5 V
4.4
0.051 @ V
GS
= 1.8 V
3.9
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
Si2314EDS (C4)*
*Marking Code
D
S
G
3 k
Parameter
Symbol
5 sec
Steady State
Unit
Drain-Source Voltage
V
DS
20
Gate-Source Voltage
V
GS
12
V
T
A
= 25 C
4.9
3.77
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 70 C
I
D
3.9
3.0
Pulsed Drain Current
b
I
DM
15
A
Avalanche Current
b
I
AS
15
Single Avalanche Energy
L = 0.1 mH
E
AS
11.25
mJ
Continuous Source Current (Diode Conduction)
a
I
S
1.0
A
T
A
= 25 C
1.25
0.75
Power Dissipation
a
T
A
= 70 C
P
D
0.80
0.48
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Parameter
Symbol
Typical
Maximum
Unit
t
5 sec
75
100
Maximum Junction-to-Ambient
a
Steady State
R
thJA
120
166
C/W
Maximum Junction-to-Foot
Steady State
R
thJF
40
50
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI2315BDS | P-Channel 1.8-V (G-S) MOSFET |
| Si2315DS-T1 | P-Channel 1.25-W, 1.8-V (G-S) MOSFET |
| SI2315DS | P-Channel 1.25-W, 1.8-V (G-S) MOSFET |
| SI2316DS | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI2319DS | P-Channel 40-V (D-S) MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI2314EDS-T1 | 功能描述:MOSFET 20V 4.9A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI2314EDS-T1-E3 | 功能描述:MOSFET 20V 4.9A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI2314EDS-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| SI2314EDS-T1-GE3 | 功能描述:MOSFET 20V 4.9A 1.25W 33mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI2315BDS | 制造商:Vishay Siliconix 功能描述:MOSFET P SOT-23 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。