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參數(shù)資料
| 型號： | SI2308DS |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel MOSFET for 12-V Boardnet SMPS; buck configuration; |
| 中文描述： | N溝道MOSFET的12V板網(wǎng)的開關(guān)電源，降壓配置; |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 59K |
| 代理商： | SI2308DS |
FEATURES
100% R
g
Tested
Si2308DS
Vishay Siliconix
Document Number: 70797
S-31725—Rev. B, 18-Aug-03
www.vishay.com
1
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
60
0.16 @ V
GS
= 10 V
0.22 @ V
GS
= 4.5 V
2.0
1.7
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
Si2308DS (A8)*
*Marking Code
Ordering Information: Si2308DS-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
60
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
2.0
T
A
= 70 C
1.6
A
Pulsed Drain Current
b
Continuous Source Current (Diode Conduction)
a
I
DM
I
S
10
1.0
Maximum Power Dissipation
a
T
A
= 25 C
T
A
= 70 C
P
D
1.25
W
0.80
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum
Unit
Maximum Junction-to-Ambient
a
R
thJA
100
C/W
Maximum Junction-to-Ambient
c
166
Notes
a.
b.
c.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Surface Mounted on FR4 Board, t =
Pulse width limited by maximum junction temperature.
Surface Mounted on FR4 Board
5 sec.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI2309DS | P-Channel 60-V (D-S) MOSFET |
| SI2311DS | P-channel 1.25-W, VGS = 1.8 V MOSFET |
| SI2314EDS | N-Channel 20-V (D-S) MOSFET |
| SI2315BDS | P-Channel 1.8-V (G-S) MOSFET |
| Si2315DS-T1 | P-Channel 1.25-W, 1.8-V (G-S) MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI2308DS | 制造商:Vishay Siliconix 功能描述:MOSFET N SOT-23 |
| SI2308DS-T1 | 功能描述:MOSFET 60V 2.0A 1.25 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI2308DS-T1-E3 | 功能描述:MOSFET 60V 2.0A 1.25 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI2308DS-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| SI2308DS-T1-GE3 | 功能描述:MOSFET 60V 2.0A 1.25W 160mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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