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參數(shù)資料
| 型號： | SI2305DS |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Ch 20-V (D-S) 1.25-W, 2.5-V MOSFET |
| 中文描述： | P溝道20V（D-S）1.25瓦，2.5V，MOSFET |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 54K |
| 代理商： | SI2305DS |
Si2305DS
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-2
Document Number: 70833
S-56947—Rev. C, 28-Dec-98
Limits
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= –10 A
–8
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= –250 A
–0.45
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
8 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= –6.4 V, V
GS
= 0 V
–1
A
V
DS
= –6.4 V, V
GS
= 0 V, T
J
= 55 C
–10
On-State Drain Current
a
I
D(on)
V
DS
–5 V, V
GS
= –4.5 V
–6
A
V
DS
–5 V, V
GS
= –2.5 V
–3
D i S
Drain-Source On-Resistance
O R
a
V
GS
= –4.5 V, I
D
= –3.5 A
0.044
0.052
r
DS(on)
V
GS
= –2.5 V, I
D
= –3 A
0.060
0.071
V
GS
= –1.8 V, I
D
= –2 A
0.087
0.108
Forward Transconductance
a
g
fs
V
DS
= –5 V, I
D
= –3.5 A
8.5
S
Diode Forward Voltage
V
SD
I
S
= –1.6 A, V
GS
= 0 V
–1.2
V
Dynamic
b
Total Gate Charge
Q
g
V
DS
= –4 V V
= –4 5 V
–3.5 A
I
D
3.5 A
10
15
Gate-Source Charge
Q
gs
2
nC
Gate-Drain Charge
Q
gd
2
Input Capacitance
C
iss
V
DS
= –4 V, V
GS
= 0, f = 1 MHz
4 V V
0 f
1245
Output Capacitance
C
oss
375
pF
Reverse Transfer Capacitance
C
rss
210
Switching
b
Turn-On Time
t
d(on)
V
DD
= –4 V R
L
= 4
–1.0 A, V
GEN
= –4.5 V
R
G
= 6
4
13
20
t
r
I
D
25
40
ns
Turn-Off Time
t
d(off)
55
80
t
f
19
35
Notes
a.
b.
c.
For DESIGN AID ONLY, not subject to production testing.
Pulse test: PW
300 s duty cycle
Switching time is essentially independent of operating temperature.
2%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI2305DS-T1 | 功能描述:MOSFET 8V 3.5A 1.25W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI2305DS-T1-E3 | 功能描述:MOSFET 8V 3.5A 1.25W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI2305DST1-E3 | 制造商:International Rectifier 功能描述: |
| SI2305DS-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| SI2305DS-T1-GE3 | 功能描述:MOSFET 8.0V 3.5A 1.25W 52mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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