參數(shù)資料
型號: S71GL128NB0
廠商: Spansion Inc.
英文描述: Stacked Multi-chip Product (MCP)
中文描述: 堆疊式多芯片產(chǎn)品(MCP)
文件頁數(shù): 94/147頁
文件大?。?/td> 1655K
代理商: S71GL128NB0
94
S29GLxxxN MirrorBit
TM
Flash Family
S29GLxxxN_00_A4 June 14, 2004
A d v a n c e I n f o r m a t i o n
AC Characteristics
Alternate CE# Controlled Erase and Program Operations–S29GL128N Only
Notes:
1. Not 100% tested.
2. See the “AC Characteristics” section for more information.
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
5. Unless otherwise indicated, AC specifications for 80 ns and 90 ns speed options are tested with V
IO
= V
CC
= 3 V. AC
specifications for 90 ns and 100 ns speed options are tested with V
IO
= 1.8 V and V
CC
= 3.0 V.
Parameter
Speed Options
JEDEC
Std.
Description
80
90
90
100
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
80
90
90
100
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ELAX
t
AH
Address Hold Time
Min
45
ns
t
DVEH
t
DS
Data Setup Time
Min
45
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
t
ELEH
t
CP
CE# Pulse Width
Min
45
ns
t
EHEL
t
CPH
CE# Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Notes 2,
3)
Typ
TBD
μs
Effective Write Buffer
Program Operation (Notes
2, 4)
Per Word
Typ
TBD
μs
Effective Accelerated Write
Buffer Program Operation
(Notes 2, 4)
Per Word
Typ
TBD
μs
Program Operation (Note 2)
Word
Typ
TBD
μs
Accelerated Programming
Operation (Note 2)
Word
Typ
TBD
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
TBD
sec
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