參數(shù)資料
型號: S6D0114
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 132 RGB X 176 DOT 1-CHIP DRIVER IC WITH INTERNAL GRAM FOR 262,144 Colors TFT-LCD
中文描述: 132的RGB × 176交通部1 -芯片驅(qū)動(dòng)器集成電路的26萬色TFT內(nèi)部革蘭氏液晶顯示器
文件頁數(shù): 94/143頁
文件大?。?/td> 1919K
代理商: S6D0114
132-RGB X 176-DOT 1-CHIP DRIVER IC FOR 262,144-COLOR TFT-LCD DISPLAY
S6D0114
Preliminary
94
HIGH-SPEED BURST RAM WRITE FUNCTION
The S6D0114 has a high-speed burst RAM-write function that can be used to write data to RAM in one-fourth the
access time required for an equivalent standard RAM-write operation. This function is especially suitable for
applications that require the high-speed rewriting of the display data, for example, display of color animations, etc.
When the high-speed RAM-write mode (HWM) is selected, data for writing to RAM is once stored to the S6D0114
internal register. When data is selected four times per word, all data is written to the on-chip RAM. While this is
taking place, the next data can be written to an internal register so that high-speed and consecutive RAM writing can
be executed for animated displays, etc.
Microcomputer
Register 1
Register 2
Register 3
Register 4
18
72
“0000”H
“0001”H
“0002”H
“0003”H
GRAM
Address
counter
(AC)
16
a) High-speed burst RAM write operation flow
CSB
(input)
b) Example of the operation of high-speed consecutive writing to RAM
1 2 3 4 1 2 3 4 1 2 3 4
Index
(R22)
RAM
data
1
RAM
data
2
RAM
data
3
RAM
data
4
RAM
data
5
RAM
data
6
RAM
data
7
RAM
data
8
RAM
data
9
RAM
data
10
RAM
data
11
RAM
data
12
Index
RAM write
execution time
RAM write
execution time
RAM write
execution time*
RAM
data 1 to 4
RAM
data 5 to 8
RAM
data 9 to 12
E
(input)
DB17-0
(input/output)
RAM write data
(72 bit)
RAM address
(AC 15-0)
“0000”H
“0004”H
“0008”H
“000A”H
NOTE: The lower two bits of the address must be set in the following way in high-speed write mode.
ID0=0: The lower 2 bits of the address must be set to 11.
ID0=1: The lower 2 bits of the address must be set to 00.
When a high speed RAM write is canceled, the next instruction must only be executed
after the RAM write execution time has elapsed.
Figure 66. Example of the operation of high-speed consecutive writing to RAM
相關(guān)PDF資料
PDF描述
S70WS512N00BFWAA2 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAA2 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAA3 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAB0 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAB2 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S6D04D2X03-BJD4 制造商:Samsung Semiconductor 功能描述:Mobile TFT driver, COG, wqVGA, 16M colors
S6D04H0A01-B0C1 制造商:Samsung Semiconductor 功能描述:TFT QVGA, 240x320, 2" TRAY, 250um
S6D05A1X31-BJD1 制造商:Samsung Semiconductor 功能描述:Mobile TFT driver, COG, HVGA, 16M Colors
S6D05A3X04-BJD1 制造商:Samsung Semiconductor 功能描述:Mobile TFT driver, COG, HVGA, 16M Colors,90Hv
S6D7AA0X04-B0E5 制造商:Samsung Semiconductor 功能描述:Resolution HD720 , Color 16M , Ramless IC , ASG type