參數(shù)資料
型號: S6D0114
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 132 RGB X 176 DOT 1-CHIP DRIVER IC WITH INTERNAL GRAM FOR 262,144 Colors TFT-LCD
中文描述: 132的RGB × 176交通部1 -芯片驅(qū)動器集成電路的26萬色TFT內(nèi)部革蘭氏液晶顯示器
文件頁數(shù): 4/143頁
文件大小: 1919K
代理商: S6D0114
132-RGB X 176-DOT 1-CHIP DRIVER IC FOR 262,144-COLOR TFT-LCD DISPLAY
S6D0114
Preliminary
4
FEATURES
132-RGB x 176-dot TFT-LCD display controller/driver IC for 262,144 colors (396ch-source driver/176ch-gate
driver)
18-/16-/9-/8-bit high-speed parallel bus interface (80- and 68- system) and serial peripheral interface (SPI)
High-speed RAM write function (transfer 4-word at a time)
Writing to a window-RAM address area by using a window-address function
Bit-operation function for graphic processing
Write-data mask functions in bit units
Logical operation in pixel unit and conditional write function
Various color-display control functions
262,144 colors can be displayed at the same time (including gamma adjust)
Vertical scroll display function in raster-row units
Internal RAM capacity: 132 x 18 x 176 = 418,176 bits
Low-power operation supports:
Power-save mode: standby mode, sleep mode
Partial display of two screens in any position
Maximum 12-time step-up circuit for generating driving voltage
Voltage followers to decrease direct current flow in the LCD drive breeder-resistors
Equalizing function for the switching performance of step-up circuits and operational amplifiers
N-raster row inversion drive (Reverse the polarity of driving voltage in every selected raster row)
Internal oscillation circuit and external hardware reset
Structure for TFT-display retention volume (Cst/Cadd structure)
Alternating functions for TFT-LCD counter-electrode power
N-line alternating drive of Vcom (Vgoff is also available for N-line alternating drive for Cadd)
Internal power supply circuit
Step-up circuit: five to nine times, positive-polarity inversion
Adjustment of Vcom(Vgoff) amplitude: internal 22-level digital potentiometer
Operating voltage
Apply voltage
VDD to VSS = 1.8 to 2.5 V (non-regulating)
VDD3 to VSS = 2.3 to 3.3 V (regulating)
Vci to VSS = 2.5 to 3.3 V
Vci1 to VSS = 1.7 to 2.75 V (2.5 x 0.68 ~ 2.75)
Generate voltage
For the source driver: AVDD to VSS = 3.5 to 5.5V (power supply for driving circuits)
GVDD to VSS = 3.0 to 5.0V (reference power supply for grayscale voltages)
For the gate driver: VGH to VGL = 14 to 30 V, VGH to VSS = +7.0 to +20 V,
VgoffL = (VGL+0.5)V to –7.5V, VgoffH = ~ to -1.5V
For the TFT-LCD counter electrode: Vcom amplitude(max) = 6V, VcomH to VSS(max) = GVDD
VcomL to VSS (max) = 1.0 V to -Vci + 0.5 V
(logic voltage range – non-regulated)
(logic voltage range – regulated)
(internal reference power-supply voltage)
(power supply for step-up circuits)
相關(guān)PDF資料
PDF描述
S70WS512N00BFWAA2 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAA2 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAA3 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAB0 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAB2 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S6D04D2X03-BJD4 制造商:Samsung Semiconductor 功能描述:Mobile TFT driver, COG, wqVGA, 16M colors
S6D04H0A01-B0C1 制造商:Samsung Semiconductor 功能描述:TFT QVGA, 240x320, 2" TRAY, 250um
S6D05A1X31-BJD1 制造商:Samsung Semiconductor 功能描述:Mobile TFT driver, COG, HVGA, 16M Colors
S6D05A3X04-BJD1 制造商:Samsung Semiconductor 功能描述:Mobile TFT driver, COG, HVGA, 16M Colors,90Hv
S6D7AA0X04-B0E5 制造商:Samsung Semiconductor 功能描述:Resolution HD720 , Color 16M , Ramless IC , ASG type