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參數(shù)資料
| 型號(hào)： | S29PL032J |
| 廠商： | Spansion Inc. |
| 英文描述： | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| 中文描述： | 3.0伏的CMOS只，同步讀/寫閃存與增強(qiáng)VersatileIO控制記憶 |
| 文件頁(yè)數(shù)： | 98/106頁(yè) |
| 文件大?。?/td> | 1997K |
| 代理商： | S29PL032J |
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96
S29PL127J/S29PL129J/S29PL064J/S29PL032J
31107A62 April 7, 2005
P R E L I M I N A R Y
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 3.0 V V
CC
, 100,000 cycles. Additionally,
programming typicals assume checkerboard pattern. All values are subject to change.
2. Under worst case conditions of 90
°
C, V
CC
= 2.7 V, 1,000,000 cycles. All values are subject to change.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most
bytes program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program
command. See
Table 21
for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 100,000 cycles.
BGA Pin Capacitance
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
Figure 23.
Timing Diagram for Alternating Between CE1# and CE2# Control
Table 34.
Erase And Programming Performance
Parameter
Sector Erase Time
Typ (
Note 1
)
Max (
Note 2
)
Unit
Comments
0.5
2
sec
Excludes 00h programming
prior to erasure (
Note 4
)
Chip Erase Time
PL127J/129J
135
216
sec
PL064J
71
113.6
sec
PL032J
39
62.4
sec
Word Program Time
6
100
μs
Excludes system level
overhead (
Note 5
)
Accelerated Word Program Time
4
60
μs
Chip Program Time
(
Note 3
)
PL127J/129J
50.4
200
sec
PL064J
25.2
50.4
sec
PL032J
12.6
25.2
sec
Parameter Symbol
C
IN
C
OUT
C
IN2
C
IN3
Parameter Description
Input Capacitance
Output Capacitance
Control Pin Capacitance
WP#/ACC Pin Capacitance
Test Setup
V
IN
= 0
V
OUT
= 0
V
IN
= 0
V
IN
= 0
Typ
6.3
7.0
5.5
11
Max
7
8
8
12
Unit
pF
pF
pF
pF
CE1#
t
CCR
t
CCR
CE2#
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29PL129J | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL064J | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL127J | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL127J55 | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL127J60 | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29PL032J55BAI120 | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 32Mbit 2M x 16bit 55ns 48-Pin FBGA Tray 制造商:Spansion 功能描述:FLASH PARALLEL - Trays |
| S29PL032J55BFI120 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 32MBIT 2MX16 55NS 48FBGA - Trays |
| S29PL032J60BFI120 | 制造商:Spansion 功能描述: |
| S29PL032J60BFI120(E) | 制造商:Spansion 功能描述:Cut Tape |
| S29PL032J70BAI120 | 功能描述:閃存 32Mb 3V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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