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參數(shù)資料
| 型號： | S29PL032J |
| 廠商： | Spansion Inc. |
| 英文描述： | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| 中文描述： | 3.0伏的CMOS只，同步讀/寫閃存與增強VersatileIO控制記憶 |
| 文件頁數(shù)： | 61/106頁 |
| 文件大?。?/td> | 1997K |
| 代理商： | S29PL032J |
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April 7, 200531107A62
S29PL127J/S29PL129J/S29PL064J/S29PL032J
59
P R E L I M I N A R Y
Hardware Data Protection
The command sequence requirement of unlock cycles for programming or erasing
provides data protection against inadvertent writes. In addition, the following
hardware data protection measures prevent accidental erasure or programming,
which might otherwise be caused by spurious system level signals during V
CC
power-up and power-down transitions, or from system noise.
Low V
CC
Write Inhibit
When V
CC
is less than V
LKO
, the device does not accept any write cycles. This pro-
tects data during V
CC
power-up and power-down. The command register and all
internal program/erase circuits are disabled, and the device resets to the read
mode. Subsequent writes are ignored until V
CC
is greater than V
LKO
. The system
must provide the proper signals to the control pins to prevent unintentional writes
when V
CC
is greater than V
LKO
.
Write Pulse “Glitch” Protection
Noise pulses of less than 3 ns (typical) on OE#, CE#, (CE1#, CE2# in PL129J) or
WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# = V
IL
, CE# (CE1# = CE2#
in PL129J)= V
IH
or WE# = V
IH
. To initiate a write cycle, CE# (CE1# / CE2# in
PL129J) and WE# must be a logical zero while OE# is a logical one.
Power-Up Write Inhibit
If WE# = CE# (CE1#, CE2# in PL129J) = V
IL
and OE# = V
IH
during power up,
the device does not accept commands on the rising edge of WE#. The internal
state machine is automatically reset to the read mode on power-up.
Figure 3.
SecSi Sector Protect Verify
Write 60h to
any address
Write 40h to SecSi
Sector address
with A6 = 0,
A1 = 1, A0 = 0
START
RESET# =
V
IH
or V
ID
Wait 1
μ
s
Read from SecSi
Sector address
with A6 = 0,
A1 = 1, A0 = 0
If data = 00h,
SecSi Sector is
unprotected.
If data = 01h,
SecSi Sector is
protected.
Remove V
IH
or V
ID
from RESET#
Write reset
command
SecSi Sector
Protect Verify
complete
相關PDF資料 |
PDF描述 |
|---|---|
| S29PL129J | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL064J | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL127J | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL127J55 | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL127J60 | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| S29PL032J55BAI120 | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 32Mbit 2M x 16bit 55ns 48-Pin FBGA Tray 制造商:Spansion 功能描述:FLASH PARALLEL - Trays |
| S29PL032J55BFI120 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 32MBIT 2MX16 55NS 48FBGA - Trays |
| S29PL032J60BFI120 | 制造商:Spansion 功能描述: |
| S29PL032J60BFI120(E) | 制造商:Spansion 功能描述:Cut Tape |
| S29PL032J70BAI120 | 功能描述:閃存 32Mb 3V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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