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參數(shù)資料
| 型號(hào)： | S29PL032J |
| 廠商： | Spansion Inc. |
| 英文描述： | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| 中文描述： | 3.0伏的CMOS只，同步讀/寫(xiě)閃存與增強(qiáng)VersatileIO控制記憶 |
| 文件頁(yè)數(shù)： | 63/106頁(yè) |
| 文件大?。?/td> | 1997K |
| 代理商： | S29PL032J |
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April 7, 200531107A62
S29PL127J/S29PL129J/S29PL064J/S29PL032J
61
P R E L I M I N A R Y
Table 18.
System Interface String
Addresses
Data
Description
1Bh
0027h
V
CC
Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
V
CC
Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
V
PP
Min. voltage (00h = no V
PP
pin present)
V
PP
Max. voltage (00h = no V
PP
pin present)
Typical timeout per single byte/word write 2
N
μs
Typical timeout for Min. size buffer write 2
N
μ
s (00h = not supported)
Typical timeout per individual block erase 2
N
ms
Typical timeout for full chip erase 2
N
ms (00h = not supported)
Max. timeout for byte/word write 2
N
times typical
Max. timeout for buffer write 2
N
times typical
Max. timeout per individual block erase 2
N
times typical
Max. timeout for full chip erase 2
N
times typical (00h = not supported)
1Ch
0036h
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
0000h
0000h
0003h
0000h
0009h
0000h
0004h
0000h
0004h
0000h
Table 19.
Device Geometry Definition
Addresses
Data
Description
27h
0018h (PL127J)
0018h (PL129J)
0017h (PL064J)
0016h (PL032J)
0001h
0000h
0000h
0000h
0003h
0007h
0000h
0020h
0000h
00FDh (PL127J)
00FDh (PL129J)
007Dh (PL064J)
003Dh (PL032J)
0000h
0000h
0001h
0007h
0000h
0020h
0000h
0000h
0000h
0000h
0000h
Device Size = 2
N
byte
28h
29h
2Ah
2Bh
2Ch
2Dh
2Eh
2Fh
30h
Flash Device Interface description (refer to CFI publication 100)
Max. number of byte in multi-byte write = 2
N
(00h = not supported)
Number of Erase Block Regions within device
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
Erase Block Region 2 Information
(refer to the CFI specification or CFI publication 100)
32h
33h
34h
35h
36h
37h
38h
39h
3Ah
3Bh
3Ch
Erase Block Region 3 Information
(refer to the CFI specification or CFI publication 100)
Erase Block Region 4 Information
(refer to the CFI specification or CFI publication 100)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29PL129J | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL064J | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL127J | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL127J55 | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL127J60 | CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29PL032J55BAI120 | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 32Mbit 2M x 16bit 55ns 48-Pin FBGA Tray 制造商:Spansion 功能描述:FLASH PARALLEL - Trays |
| S29PL032J55BFI120 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 32MBIT 2MX16 55NS 48FBGA - Trays |
| S29PL032J60BFI120 | 制造商:Spansion 功能描述: |
| S29PL032J60BFI120(E) | 制造商:Spansion 功能描述:Cut Tape |
| S29PL032J70BAI120 | 功能描述:閃存 32Mb 3V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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