參數(shù)資料
型號(hào)： S29PL032J
廠商： Spansion Inc.
英文描述： CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
中文描述： 3.0伏的CMOS只，同步讀/寫(xiě)閃存與增強(qiáng)VersatileIO控制記憶
文件頁(yè)數(shù)： 23/106頁(yè)
文件大?。?/td> 1997K
代理商： S29PL032J
April 7, 200531107A62
S29PL127J/S29PL129J/S29PL064J/S29PL032J
21
P R E L I M I N A R Y
Device Bus Operations
This section describes the requirements and use of the device bus operations,
which are initiated through the internal command register. The command register
itself does not occupy any addressable memory location. The register is a latch
used to store the commands, along with the address and data information
needed to execute the command. The contents of the register serve as inputs to
the internal state machine. The state machine outputs dictate the function of the
device.
Table 1
lists the device bus operations, the inputs and control levels they
require, and the resulting output. The following subsections describe each of
these operations in further detail.
Legend:
L = Logic Low = V
IL
, H = Logic High = V
, V
= 11.5–12.5
V, V
HH
= 8.5–9.5
V, X = Don’t Care, SA = Sector
Address, A
IN
= Address In, D
IN
= Data In, D
OUT
= Data Out
Notes:
1. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the
"
High Voltage Sector Protection
" section section.
2. WP#/ACC must be high when writing to upper two and lower two sectors.
Table 1.
PL127J Device Bus Operations
Operation
CE#
OE#
WE#
RESET#
WP#/ACC
Addresses
(Amax–A0)
DQ15–
DQ0
Read
L
L
H
H
X
A
IN
D
OUT
Write
L
H
L
H
X (Note
2
)
A
IN
D
IN
Standby
V
±
0.3 V
X
X
V
±
0.3 V
X (Note
2
)
X
High-Z
Output Disable
L
H
H
H
X
X
High-Z
Reset
X
X
X
L
X
X
High-Z
Temporary Sector Unprotect (High Voltage)
X
X
X
V
ID
X
A
IN
D
IN
Table 2.
PL129J Device Bus Operations
Operation
CE1#
CE2#
OE#
WE#
RESET#
WP#/ACC
Addresses
(A21–A0)
DQ15–
DQ0
Read
L
H
L
H
H
X
A
IN
D
OUT
H
L
Write
L
H
H
L
H
X
(
Note 2
)
A
IN
D
IN
H
L
Standby
V
±
0.3 V
V
±
0.3 V
X
X
V
±
0.3 V
X
X
High-Z
Output Disable
L
L
H
H
H
X
X
High-Z
Reset
X
X
X
X
L
X
X
High-Z
Temporary Sector Unprotect
(High Voltage)
X
X
X
X
V
ID
X
A
IN
D
IN
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參數(shù)描述
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S29PL032J60BFI120(E) 制造商:Spansion 功能描述:Cut Tape
S29PL032J70BAI120 功能描述:閃存 32Mb 3V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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