參數(shù)資料
型號(hào)： S29PL032J
廠(chǎng)商： Spansion Inc.
英文描述： CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
中文描述： 3.0伏的CMOS只，同步讀/寫(xiě)閃存與增強(qiáng)VersatileIO控制記憶
文件頁(yè)數(shù)： 72/106頁(yè)
文件大?。?/td> 1997K
代理商： S29PL032J
70
S29PL127J/S29PL129J/S29PL064J/S29PL032J
31107A62 April 7, 2005
P R E L I M I N A R Y
operation using the DQ7 or DQ6 status bits, just as in the standard Word Program
operation. Refer to the "
Write Operation Status" section
section for more
information.
In the erase-suspend-read mode, the system can also issue the autoselect com-
mand sequence. The device allows reading autoselect codes even at addresses
within erasing sectors, since the codes are not stored in the memory array. When
the device exits the autoselect mode, the device reverts to the Erase Suspend
mode, and is ready for another valid operation. Refer to the "
SecSiTM Sector Ad-
dresses
" section and the "
Autoselect Command Sequence
" section sections for
details.
To resume the sector erase operation, the system must write the Erase Resume
command (address bits are don’t care). The bank address of the erase-sus-
pended bank is required when writing this command. Further writes of the
Resume command are ignored. Another Erase Suspend command can be written
after the chip has resumed erasing.
If the Persistent Sector Protection Mode Locking Bit is verified as programmed
without margin, the Persistent Sector Protection Mode Locking Bit Program Com-
mand should be reissued to improve program margin.
If the SecSi Sector
Protection Bit is verified as programmed without margin, the SecSi Sector Pro-
tection Bit Program Command should be reissued to improve program margin.
μμ
After programming a PPB, two additional cycles are needed to determine
whether the PPB has been programmed with margin. If the PPB has been pro-
grammed without margin, the program command should be reissued to improve
the program margin. Also note that the total number of PPB program/erase cycles
is limited to 100 cycles. Cycling the PPBs beyond 100 cycles is not guaranteed.
After erasing the PPBs, two additional cycles are needed to determine whether
the PPB has been erased with margin. If the PPBs has been erased without mar-
gin, the erase command should be reissued to improve the program margin. The
programming of either the PPB or DYB for a given sector or sector group can be
verified by writing a Sector Protection Status command to the device.
Note that there is no single command to independently verify the programming
of a DYB for a given sector group.
相關(guān)PDF資料
PDF描述
S29PL129J CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL064J CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL127J CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL127J55 CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL127J60 CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29PL032J55BAI120 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 32Mbit 2M x 16bit 55ns 48-Pin FBGA Tray 制造商:Spansion 功能描述:FLASH PARALLEL - Trays
S29PL032J55BFI120 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 32MBIT 2MX16 55NS 48FBGA - Trays
S29PL032J60BFI120 制造商:Spansion 功能描述:
S29PL032J60BFI120(E) 制造商:Spansion 功能描述:Cut Tape
S29PL032J70BAI120 功能描述:閃存 32Mb 3V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線(xiàn)寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪(fǎng)問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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