參數(shù)資料
型號(hào)： S29PL032J
廠商： Spansion Inc.
英文描述： CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
中文描述： 3.0伏的CMOS只，同步讀/寫閃存與增強(qiáng)VersatileIO控制記憶
文件頁(yè)數(shù)： 9/106頁(yè)
文件大小： 1997K
代理商： S29PL032J
April 7, 200531107A62
S29PL127J/S29PL129J/S29PL064J/S29PL032J
7
P R E L I M I N A R Y
Table 23. Write Operation Status ......................................... 81
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . .82
Figure 8. Maximum Overshoot Waveforms............................. 82
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . .83
Industrial (I) Devices ..........................................................................................83
Extended (E) Devices .........................................................................................83
Supply Voltages ....................................................................................................83
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . .84
Table 24. CMOS Compatible ................................................ 84
AC Characteristic . . . . . . . . . . . . . . . . . . . . . . . . . .85
Test Conditions ..................................................................................................85
Figure 9. Test Setups......................................................... 85
Table 25. Test Specifications ............................................... 85
SWITCHING WAVEFORMS .........................................................................86
Table 26. KEY TO SWITCHING WAVEFORMS ......................... 86
Figure 10. Input Waveforms and Measurement Levels............. 86
VCC RampRate ..................................................................................................86
Read Operations ................................................................................................87
Table 27. Read-Only Operations .......................................... 87
Figure 11. Read Operation Timings....................................... 88
Figure 12. Page Read Operation Timings ............................... 88
Reset ......................................................................................................................89
Table 28. Hardware Reset (RESET#) .................................... 89
Figure 13. Reset Timings..................................................... 89
Erase/Program Operations .............................................................................90
Table 29. Erase and Program Operations .............................. 90
Timing Diagrams ..................................................................................................91
Figure 14. Program Operation Timings.................................. 91
Figure 15. Accelerated Program Timing Diagram .................... 91
Figure 16. Chip/Sector Erase Operation Timings..................... 92
Figure 17. Back-to-back Read/Write Cycle Timings................. 92
Figure 18. Data# Polling Timings (During Embedded Algorithms)..
........................................................................................ 93
Figure 19. Toggle Bit Timings (During Embedded Algorithms).. 93
Figure 20. DQ2 vs. DQ6 ..................................................... 94
Protect/Unprotect . . . . . . . . . . . . . . . . . . . . . . . . 94
Table 30. Temporary Sector Unprotect .................................94
Figure 21. Temporary Sector Unprotect Timing Diagram......... 94
Figure 22. Sector/Sector Block Protect and Unprotect Timing
Diagram........................................................................... 95
Controlled Erase Operations .........................................................................96
Table 31. Alternate CE# Controlled Erase and Program Operations
........................................................................................ 96
Table 32. Alternate CE# Controlled Write (Erase/Program) Opera-
tion Timings ...................................................................... 97
Table 33. CE1#/CE2# Timing (S29PL129J only) .................... 97
Figure 23. Timing Diagram for Alternating Between CE1# and CE2#
Control............................................................................. 98
Table 34. Erase And Programming Performance ..................... 98
BGA Pin Capacitance . . . . . . . . . . . . . . . . . . . . . 98
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . . .99
VBG080—80-Ball Fine-pitch Ball Grid Array 8 x 11 mm Package (PL127J
and PL129J) ............................................................................................................99
VBH064—64-Ball Fine-pitch Ball Grid Array 8 x 11.6 mm package
(PL127J) ...............................................................................................................100
VBK048—48-Ball Fine-pitch Ball Grid Array 8.15 x 6.15 mm package
(PL127J) .................................................................................................................101
TLC056—56-Ball Fine-pitch BGA 7 x 9mm package (PL064J and PL032J)
..................................................................................................................................102
TS056—20 x 14 mm, 56-pin TSOP (PL127J) .............................................103
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 104
相關(guān)PDF資料
PDF描述
S29PL129J CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL064J CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL127J CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL127J55 CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29PL032J55BAI120 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 32Mbit 2M x 16bit 55ns 48-Pin FBGA Tray 制造商:Spansion 功能描述:FLASH PARALLEL - Trays
S29PL032J55BFI120 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 32MBIT 2MX16 55NS 48FBGA - Trays
S29PL032J60BFI120 制造商:Spansion 功能描述:
S29PL032J60BFI120(E) 制造商:Spansion 功能描述:Cut Tape
S29PL032J70BAI120 功能描述:閃存 32Mb 3V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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