參數(shù)資料
型號(hào): S29GL128N10FAI010
廠商: SPANSION LLC
元件分類(lèi): DRAM
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
中文描述: 8M X 16 FLASH 3V PROM, 100 ns, PBGA64
封裝: 13 X 11 MM, FBGA-64
文件頁(yè)數(shù): 99/100頁(yè)
文件大?。?/td> 952K
代理商: S29GL128N10FAI010
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit Flash Family
97
D a t a S h e e t
Advance I nformation on S9GL-P AC Characteristics
Changed speed specifications and units of measure for t
READY
, t
RP
, t
RH
, and t
RPD
. Changed
specifications on t
READY
from maximum to minimum.
Revision A9 (June 15, 2005)
Ordering I nformation table
Added note to temperature range.
Valid Combinations table
Replaced table.
DC Characteristics table
Replaced V
IL
lines for I
CC4
, I
CC5
, I
CC6
.
Connection Diagrams
Modified 56-Pin Standard TSOP (pg 8). Modified 64-ball Fortified BGA.
Advance I nformation on S9GL-P AC Characteristics
Added second table.
Revision B0 (April 22, 2006)
Global
Changed document status to Full Production.
Ordering I nformation
Changed description of “A” for Package Materials Set. Modified S29GL128N Valid Combina-
tions table.
S29GL128N Sector Address Table
Corrected bit range values for A22–A16.
Persistent Protection Bit ( PPB)
Corrected typo in second sentence, second paragraph.
Secured Silicon Sector Flash Memory Region
Deleted note at end of second paragraph.
Customer Lockable: Secured Silicon Sector NOT Programmed or Protected At the
Factory
Modified 1st bullet text.
W rite Protect ( W P# )
Modified third paragraph.
Device Geometry Definition table
Changed 1st x8 address for Erase Block Region 2.
W ord Program Command Sequence
Modified fourth paragraph.
W rite Buffer Programming
Deleted note from eighth paragraph.
Program Suspend/ Program Resume Command Sequence
Corrected typos in first paragraph.
Lock Register Command Set Definitions
Modified fifth paragraph.
相關(guān)PDF資料
PDF描述
S29GL128N10FAI012 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N10FAI013 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N10FAI020 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N10FAI022 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N10FAI023 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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S29GL128N10TFI020 制造商:Spansion 功能描述:S29GL128N10TFI020 制造商:Spansion 功能描述:Flash - NOR IC