參數(shù)資料
型號(hào)： S29GL128N10FAI010
廠商： SPANSION LLC
元件分類： DRAM
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
中文描述： 8M X 16 FLASH 3V PROM, 100 ns, PBGA64
封裝： 13 X 11 MM, FBGA-64
文件頁(yè)數(shù)： 60/100頁(yè)
文件大?。?/td> 952K
代理商： S29GL128N10FAI010
58
S29GL-N MirrorBit Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a S h e e t
Figure 4. Erase Operation
Erase Suspend/ Erase Resume Commands
The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation
and then read data from, or program data to, any sector not selected for erasure. This com-
mand is valid only during the sector erase operation, including the 50 μs time-out period
during the sector erase command sequence. The Erase Suspend command is ignored if writ-
ten during the chip erase operation or Embedded Program algorithm.
When the Erase Suspend command is written during the sector erase operation, the device
requires a typical of 5
μ
s
(
maximum of 20
μ
s) to suspend the erase operation. However, when
the Erase Suspend command is written during the sector erase time-out, the device immedi-
ately terminates the time-out period and suspends the erase operation.
After the erase operation is suspended, the device enters the erase-suspend-read mode. The
system can read data from or program data to any sector not selected for erasure. (The de-
vice
erase suspend
s all sectors selected for erasure.) Reading at any address within
erase-suspended sectors produces status information on DQ7–DQ0. The system can use
DQ7, or DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-sus-
pended. Refer to the Write Operation Status section for information on these status bits.
After an erase-suspended program operation is complete, the device returns to the
erase-suspend-read mode. The system can determine the status of the program operation
using the DQ7 or DQ6 status bits, just as in the standard word program operation. Refer to
Write Operation Status on page 67
for more information.
START
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
Notes:
1.
See
Table 12 on
page 63
and
Table 14 on
page 65
for
program
command
相關(guān)PDF資料
PDF描述
S29GL128N10FAI012 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N10FAI013 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N10FAI020 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N10FAI022 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N10FAI023 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL128N10FFI010 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 128Mbit 16M/8M x 8bit/16bit 100ns 64-Pin Fortified BGA Tray 制造商:Spansion 功能描述:MIRRORBIT FLASH 128MB SMD 29LV128
S29GL128N10FFI020 制造商:Spansion 功能描述:Flash - NOR IC
S29GL128N10TF101 制造商:Spansion 功能描述:
S29GL128N10TFI010 功能描述:IC FLASH 制造商:cypress semiconductor corp 系列:GL-N 包裝:托盤(pán) 零件狀態(tài):在售 存儲(chǔ)器類型:非易失 存儲(chǔ)器格式:閃存 技術(shù):FLASH - NOR 存儲(chǔ)容量:128Mb （16M x 8，8M x 16） 寫(xiě)周期時(shí)間 - 字，頁(yè):100ns 訪問(wèn)時(shí)間:100ns 存儲(chǔ)器接口:并聯(lián) 電壓 - 電源:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 安裝類型:表面貼裝 封裝/外殼:56-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商器件封裝:56-TSOP 標(biāo)準(zhǔn)包裝:91
S29GL128N10TFI020 制造商:Spansion 功能描述:S29GL128N10TFI020 制造商:Spansion 功能描述:Flash - NOR IC
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*