參數(shù)資料
型號(hào)： S29GL128N10FAI010
廠商： SPANSION LLC
元件分類： DRAM
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
中文描述： 8M X 16 FLASH 3V PROM, 100 ns, PBGA64
封裝： 13 X 11 MM, FBGA-64
文件頁數(shù)： 63/100頁
文件大?。?/td> 952K
代理商： S29GL128N10FAI010
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit Flash Family
61
D a t a S h e e t
The PPB Program command is used to program, or set, a given PPB bit. Each PPB bit is indi-
vidually programmed (but is bulk erased with the other PPB bits). The specific sector address
(A24-A16 for S29GL512N, A23-A16 for S29GL256N, A22-A16 for S29GL128N) is written at
the same time as the program command. If the PPB Lock Bit is set to the
freeze state
, the
PPB Program command does not execute and the command times-out without programming
the PPB bit.
All PPB Erase Command
The All PPB Erase command is used to erase all PPB bits in bulk. There is no means for indi-
vidually erasing a specific PPB bit. Unlike the PPB program, no specific sector address is
required. However, when the All PPB Erase command is issued, all Sector PPB bits are erased
in parallel. If the PPB Lock Bit is set to
freeze state
, the ALL PPB Erase command does not
execute and the command times-out without erasing the PPB bits.
The device preprograms all PPB bits prior to erasing when issuing the All PPB Erase command.
Also note that the total number of PPB program/erase cycles has the same endurance as the
flash memory array.
PPB Status Read Command
The programming state of the PPB for a given sector can be verified by writing a PPB Status
Read Command to the device. This requires an initial access time latency.
The
Non-Volatile Sector Protection Command Set Exit
command must be issued after
the execution of the commands listed previously to reset the device to read mode.
Note that issuing the
Non-V olatile S ector Protection Command S et Exit
command
re-enables reads and w rites for the main memory
.
Global Volatile Sector Protection Freeze Command Set
The Global Volatile Sector Protection Freeze Command Set permits the user to set the PPB
Lock Bit and reading the logic state of the PPB Lock Bit.
The
Global Volatile Sector Protection Freeze Command Set Entry
command sequence
must be issued prior to any of the commands listed following to enable proper command
execution.
Reads and w rites from the main memory are not allow ed.
PPB Lock Bit Set Command
The PPB Lock Bit Set command is used to set the PPB Lock Bit to the
freeze state
if it is cleared
either at reset or if the Password Unlock command was successfully executed. There is no PPB
Lock Bit Clear command. Once the PPB Lock Bit is set to the
freeze state
, it cannot be cleared
unless the device is taken through a power-on clear (for Persistent Protection Mode) or the
Password Unlock command is executed (for Password Protection Mode). If the Password Pro-
tection Mode Lock Bit is programmed, the PPB Lock Bit status is reflected as set to the
freeze
state
, even after a power-on reset cycle.
PPB Lock Bit Status Read Command
The programming state of the PPB Lock Bit can be verified by executing a PPB Lock Bit Status
Read command to the device.
The
Global Volatile Sector Protection Freeze Command Set Exit
command must be is-
sued after the execution of the commands listed previously to reset the device to read mode.
相關(guān)PDF資料
PDF描述
S29GL128N10FAI012 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N10FAI013 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N10FAI020 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N10FAI022 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N10FAI023 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL128N10FFI010 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 128Mbit 16M/8M x 8bit/16bit 100ns 64-Pin Fortified BGA Tray 制造商:Spansion 功能描述:MIRRORBIT FLASH 128MB SMD 29LV128
S29GL128N10FFI020 制造商:Spansion 功能描述:Flash - NOR IC
S29GL128N10TF101 制造商:Spansion 功能描述:
S29GL128N10TFI010 功能描述:IC FLASH 制造商:cypress semiconductor corp 系列:GL-N 包裝:托盤 零件狀態(tài):在售 存儲(chǔ)器類型:非易失 存儲(chǔ)器格式:閃存 技術(shù):FLASH - NOR 存儲(chǔ)容量:128Mb （16M x 8，8M x 16） 寫周期時(shí)間 - 字，頁:100ns 訪問時(shí)間:100ns 存儲(chǔ)器接口:并聯(lián) 電壓 - 電源:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 安裝類型:表面貼裝 封裝/外殼:56-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商器件封裝:56-TSOP 標(biāo)準(zhǔn)包裝:91
S29GL128N10TFI020 制造商:Spansion 功能描述:S29GL128N10TFI020 制造商:Spansion 功能描述:Flash - NOR IC
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