- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄365375 > PZT2907AT1 (MOTOROLA INC) SOT-223 PACKAGE PNP SILICON TRANSISTOR SURFACE MOUNT PDF資料下載
參數(shù)資料
| 型號： | PZT2907AT1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | SOT-223 PACKAGE PNP SILICON TRANSISTOR SURFACE MOUNT |
| 中文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-261AA |
| 封裝： | CASE 318E-04, 4 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 139K |
| 代理商： | PZT2907AT1 |
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
INFORMATION FOR USING THE SOT-223 SURFACE MOUNT PACKAGE
POWER DISSIPATION
The power dissipation of the SOT-223 is a function of the
pad size. These can vary from the minimum pad size for
soldering to the pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction tempera-
ture of the die, R
θ
JA, the thermal resistance from the device
junction to ambient; and the operating temperature, TA.
Using the values provided on the data sheet for the SOT-223
package, PD can be calculated as follows.
TJ(max) – TA
R
θ
JA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
PD =
the equation for an ambient temperature TA of 25
°
C, one can
calculate the power dissipation of the device which in this
case is 1.5 watts.
PD =
150
°
C – 25
°
C
83.3
°
C/W
= 1.5 watts
The 83.3
°
C/W for the SOT-223 package assumes the
recommended collector pad area of 965 sq. mils on a glass
epoxy printed circuit board to achieve a power dissipation of
1.5 watts. If space is at a premium, a more realistic
approach is to use the device at a PD of 833 mW using the
footprint shown. Using a board material such as Thermal
Clad, a power dissipation of 1.6 watts can be achieved using
the same footprint.
MOUNTING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
Always preheat the device.
The delta temperature between the preheat and soldering
should be 100
°
C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference should be a maximum of 10
°
C.
The soldering temperature and time should not exceed
260
°
C for more than 10 seconds.
When shifting from preheating to soldering, the maximum
temperature gradient should be 5
°
C or less.
After soldering has been completed, the device should be
allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied during
cooling
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.079
2.0
0.15
3.8
0.248
6.3
0.079
2.0
0.059
1.5
0.059
1.5
0.059
1.5
0.091
2.3
mm
inches
0.091
2.3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PZT2907A | PNP General Purpose Amplifier |
| PZT3904T1 | General Purpose Transistor |
| PZT651T1 | NPN Silicon Planar Epitaxial Transistor(NPN型外延晶體管) |
| PZT65 | HIGH CURRENT NPN SILICON TRANSISTOR SURFACE MOUNT |
| PZT651T3 | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-261AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PZT2907AT1/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PNP Silicon Planar Epitaxial Transistor |
| PZT2907AT1_11 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:PNP Silicon Epitaxial Transistor |
| PZT2907AT1G | 功能描述:兩極晶體管 - BJT 600mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PZT2907AT1G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| PZT2907AT3 | 功能描述:兩極晶體管 - BJT 600mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。