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參數(shù)資料
| 型號： | PZT65 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | HIGH CURRENT NPN SILICON TRANSISTOR SURFACE MOUNT |
| 中文描述： | 大電流NPN硅晶體管表面貼裝 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 101K |
| 代理商： | PZT65 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer
applications. The device is housed in the SOT–223 package which is designed for
medium power surface mount applications.
High Current: 2.0 Amp
The SOT–223 package can be soldered using wave or reflow.
SOT–223 package ensures level mounting, resulting in improved thermal
conduction, and allows visual inspection of soldered joints. The formed
leads absorb thermal stress during soldering, eliminating the possibility
of damage to the die.
Available in 12 mm Tape and Reel
Use PZT651T1 to order the 7 inch/1000 unit reel
Use PZT651T3 to order the 13 inch/4000 unit reel
PNP Complement is PZT751T1
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
60
Vdc
Collector–Base Voltage
80
Vdc
Emitter–Base Voltage
5.0
Vdc
Collector Current
Total Power Dissipation @ TA = 25
°
C(1)
Derate above 25
°
C
2.0
Adc
0.8
6.4
Watts
mW/
°
C
Storage Temperature Range
Tstg
TJ
–65 to 150
°
C
Junction Temperature
150
°
C
DEVICE MARKING
651
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance from Junction–to–Ambient in Free Air
R
θ
JA
TL
156
°
C/W
Maximum Temperature for Soldering Purposes
Time in Solder Bath
260
10
°
C
Sec
1. Device mounted on a FR–4 glass epoxy printed circuit board using minimum recommended footprint.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a trademark of the Bergquist Company
Order this document
by PZT651T1/D
SEMICONDUCTOR TECHNICAL DATA
SOT–223 PACKAGE
HIGH CURRENT
NPN SILICON
TRANSISTOR
SURFACE MOUNT
Motorola Preferred Device
CASE 318E–04, STYLE 1
TO–261AA
1
2
3
4
COLLECTOR 2,4
BASE
1
EMITTER 3
REV 1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PZT651T3 | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-261AA |
| PZT751T1 | PNP Silicon Planar Epitaxial Transistor(硅PNP平面外延晶體管) |
| PZT751T1G | PNP Silicon Planar Epitaxial Transistor |
| PZT751T1 | SOT-223 PACKAGE HIGH CURRENT PNP SILICON TRANSISTOR SURFACE MOUNT |
| PZTA42T1 | High Voltage Transistor Surface Mount NPN Silicon(NPN型,表面安裝，高壓晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PZT651 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:NPN Silicon Planar Epitaxial Transistor |
| PZT651T1 | 功能描述:兩極晶體管 - BJT 2A 80V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PZT651T1/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN Silicon Planar Epitaxial Transistor |
| PZT651T1G | 功能描述:兩極晶體管 - BJT 2A 80V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PZT651T3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-261AA |
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