- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄365375 > PZTA42T1 (ON SEMICONDUCTOR) High Voltage Transistor Surface Mount NPN Silicon(NPN型,表面安裝，高壓晶體管) PDF資料下載
參數(shù)資料
| 型號： | PZTA42T1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | High Voltage Transistor Surface Mount NPN Silicon(NPN型,表面安裝，高壓晶體管) |
| 中文描述： | 500 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-261AA |
| 封裝： | CASE 318E-04, TO-261, 4 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 131K |
| 代理商： | PZTA42T1 |
Semiconductor Components Industries, LLC, 2006
March, 2006
Rev. 6
1
Publication Order Number:
PZTA42T1/D
PZTA42T1
Preferred Devices
High Voltage Transistor
Surface Mount
NPN Silicon
Features
Pb
Free Package is Available
MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
(Open Base)
V
CEO
300
Vdc
Collector-Base Voltage
(Open Emitter)
V
CBO
300
Vdc
Emitter-Base Voltage
(Open Collector)
V
EBO
6.0
Vdc
Collector Current (DC)
I
C
500
Adc
Total Power Dissipation
@ T
A
= 25
°
C (Note 1)
P
D
1.5
W
Storage Temperature Range
T
stg
65 to 150
°
C
Junction Temperature
T
J
150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction
to
Ambient (Note 1)
R
JA
83.3
°
C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR-4 glass epoxy printed circuit board
1.575 in x 1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in.
SOT
223
CASE 318E
04
STYLE 1
MARKING
DIAGRAM
Preferred
devices are recommended choices for future use
and best overall value.
COLLECTOR 2, 4
BASE
1
EMITTER 3
SOT
223 PACKAGE
NPN SILICON
HIGH VOLTAGE TRANSISTOR
SURFACE MOUNT
1
2
3
4
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
1
AYW
P1D
P1D
A
Y
W
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb
Free Package
(Note: Microdot may be in either location)
http://onsemi.com
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PZTA42T1 | Circular Connector; Body Material:Aluminum; Series:PT00; Number of Contacts:12; Connector Shell Size:14; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin; Insert Arrangement:14-12 |
| PZTA42 | Circular Connector; No. of Contacts:12; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:14; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:14-12 |
| PZTA42 | Circular Connector; Body Material:Aluminum; Series:PT00; Number of Contacts:8; Connector Shell Size:12; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket |
| PZTA64T1 | PNP SILICON DARLINGTON TRANSISTOR SURFACE MOUNT |
| PZTA64 | PNP Darlington transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PZTA42T1/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:High Voltage Transistor NPN |
| PZTA42T1G | 功能描述:兩極晶體管 - BJT 500mA 300V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PZTA42T1G | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR |
| PZTA43 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon High-Voltage Transistors |
| PZTA43G-AA3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復。