參數(shù)資料
型號(hào)： PZTA42T1
廠商： ON SEMICONDUCTOR
元件分類： 小信號(hào)晶體管
英文描述： High Voltage Transistor Surface Mount NPN Silicon(NPN型,表面安裝，高壓晶體管)
中文描述： 500 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-261AA
封裝： CASE 318E-04, TO-261, 4 PIN
文件頁數(shù)： 2/4頁
文件大?。?/td> 131K
代理商： PZTA42T1
PZTA42T1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristics
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Note 2)
(I
C
= 1.0 mAdc, I
B
= 0)
V
(BR)CEO
300
—
Vdc
Collector-Base Breakdown Voltage
(I
C
= 100 Adc, I
E
= 0)
V
(BR)CBO
300
—
Vdc
Emitter-Base Breakdown Voltage
(I
E
= 100 Adc, I
C
= 0)
V
(BR)EBO
6.0
—
Vdc
Collector-Base Cutoff Current
(V
CB
= 200 Vdc, I
E
= 0)
I
CBO
—
0.1
Adc
Emitter-Base Cutoff Current
(V
BE
= 6.0 Vdc, I
C
= 0)
I
EBO
—
0.1
Adc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc)
(I
C
= 30 mAdc, V
CE
= 10 Vdc)
h
FE
25
40
40
—
—
—
—
DYNAMIC CHARACTERISTICS
Current-Gain — Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
f
T
50
—
MHz
Feedback Capacitance
(V
CB
= 20 Vdc, I
E
= 0, f = 1.0 MHz)
C
re
—
3.0
pF
Collector-Emitter Saturation Voltage
(I
C
= 20 mAdc, I
B
= 2.0 mAdc)
V
CE(sat)
—
0.5
Vdc
Base-Emitter Saturation Voltage
(I
C
= 20 mAdc, I
B
= 2.0 mAdc)
V
BE(sat)
—
0.9
Vdc
2. Pulse Test Conditions, t
p
= 300 s, 0.02.
Figure 1. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
120
0.1
1.0
10
100
80
60
0
h
T
J
= +125
°
C
25
°
C
55
°
C
V
CE
= 10 Vdc
100
20
40
相關(guān)PDF資料
PDF描述
PZTA42T1 Circular Connector; Body Material:Aluminum; Series:PT00; Number of Contacts:12; Connector Shell Size:14; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin; Insert Arrangement:14-12
PZTA42 Circular Connector; No. of Contacts:12; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:14; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:14-12
PZTA42 Circular Connector; Body Material:Aluminum; Series:PT00; Number of Contacts:8; Connector Shell Size:12; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket
PZTA64T1 PNP SILICON DARLINGTON TRANSISTOR SURFACE MOUNT
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PZTA42T1/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:High Voltage Transistor NPN
PZTA42T1G 功能描述:兩極晶體管 - BJT 500mA 300V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PZTA42T1G 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR
PZTA43 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon High-Voltage Transistors
PZTA43G-AA3-R 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE TRANSISTOR
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