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參數(shù)資料
| 型號(hào)： | PZTA42 |
| 廠商： | SIEMENS A G |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Circular Connector; Body Material:Aluminum; Series:PT00; Number of Contacts:8; Connector Shell Size:12; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket |
| 中文描述： | 500 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 123K |
| 代理商： | PZTA42 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage (Open Base)
VCEO
VCBO
VEBO
IC
PD
Tstg
TJ
300
Vdc
Collector-Base Voltage (Open Emitter)
300
Vdc
Emitter-Base Voltage (Open Collector)
6.0
Vdc
Collector Current (DC)
Total Power Dissipation @ TA = 25
°
C(1)
Storage Temperature Range
500
mAdc
1.5
Watts
–65 to +150
°
C
Junction Temperature
150
°
C
DEVICE MARKING
P1D
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction-to-Ambient(1)
R
θ
JA
83.3
°
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristics
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
300
—
Vdc
Collector-Base Breakdown Voltage
(IC = 100
μ
Adc, IE = 0)
V(BR)CBO
300
—
Vdc
Emitter-Base Breakdown Voltage
(IE = 100
μ
Adc, IC = 0)
V(BR)EBO
6.0
—
Vdc
Collector-Base Cutoff Current
(VCB = 200 Vdc, IE = 0)
ICBO
—
0.1
μ
Adc
Emitter-Base Cutoff Current
(VBE = 6.0 Vdc, IC = 0)
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min 0.93 in2.
2. Pulse Test Conditions, tp = 300
μ
s,
δ
= 0.02.
IEBO
—
0.1
μ
Adc
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by PZTA42T1/D
SEMICONDUCTOR TECHNICAL DATA
SOT–223 PACKAGE
NPN SILICON
HIGH VOLTAGE
TRANSISTOR
SURFACE MOUNT
Motorola Preferred Device
CASE 318E-04, STYLE 1
TO-261AA
1
2
3
4
COLLECTOR 2,4
BASE
1
EMITTER 3
REV 2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PZTA42 T/R | 功能描述:兩極晶體管 - BJT TRANS HV TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PZTA42,115 | 功能描述:兩極晶體管 - BJT TRANS HV TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PZTA42 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR NPN SOT-223 |
| PZTA42 | 制造商:Fairchild Semiconductor Corporation 功能描述:NPN 300V HI BIPOLR SOT223 SNGL |
| PZTA42_07 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon High-Voltage Transistors Low collector-emitter saturation voltage |
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