參數(shù)資料
型號: PZT751T1
廠商: MOTOROLA INC
元件分類: 小信號晶體管
英文描述: SOT-223 PACKAGE HIGH CURRENT PNP SILICON TRANSISTOR SURFACE MOUNT
中文描述: 2000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-261AA
文件頁數(shù): 1/6頁
文件大?。?/td> 127K
代理商: PZT751T1
Semiconductor Components Industries, LLC, 2004
January, 2004
Rev. 4
1
Publication Order Number:
PZT751T1/D
PZT751T1
Preferred Device
PNP Silicon Planar
Epitaxial Transistor
This PNP Silicon Epitaxial transistor is designed for use in
industrial and consumer applications. The device is housed in the
SOT
223 package which is designed for medium power surface
mount applications.
Features
High Current: 2.0 A
The SOT
223 Package can be soldered using wave or reflow.
SOT
223 package ensures level mounting, resulting in improved
thermal conduction, and allows visual inspection of soldered joints.
The formed leads absorb thermal stress during soldering, eliminating
the possibility of damage to the die
NPN Complement is PZT651T1
Pb
Free Package is Available
MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector
Emitter Voltage
V
CEO
60
Vdc
Collector
Base Voltage
V
CBO
80
Vdc
Emitter
Base Voltage
V
EBO
5.0
Vdc
Collector Current
I
C
2.0
Adc
Total Power Dissipation @ T
A
= 25
°
C
(1)
Derate above 25
°
C
P
D
0.8
6.4
W
mW/
°
C
Storage Temperature Range
T
stg
65 to 150
°
C
Junction Temperature
T
J
150
°
C
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Thermal Resistance from Junction
to
Ambient in Free Air
R
JA
156
°
C/W
Maximum Temperature for Soldering
Purposes
Time in Solder Bath
T
L
260
10
°
C
Sec
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Device mounted on a FR
4 glass epoxy printed circuit board using minimum
recommended footprint.
http://onsemi.com
SOT
223 PACKAGE
HIGH CURRENT
PNP SILICON TRANSISTOR
SURFACE MOUNT
TO
261AA
CASE 318E
STYLE 1
COLLECTOR 2, 4
BASE
1
EMITTER 3
Preferred
devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
PZT751T1
SOT
223
1000 / Tape & Reel
PZT751T1G
SOT
223
(Pb
Free)
1000 / Tape & Reel
MARKING
DIAGRAM
ZT 751 = Specific Device Code
D
= Date Code
D
ZT 751
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
相關(guān)PDF資料
PDF描述
PZTA42T1 High Voltage Transistor Surface Mount NPN Silicon(NPN型,表面安裝,高壓晶體管)
PZTA42T1 Circular Connector; Body Material:Aluminum; Series:PT00; Number of Contacts:12; Connector Shell Size:14; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin; Insert Arrangement:14-12
PZTA42 Circular Connector; No. of Contacts:12; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:14; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:14-12
PZTA42 Circular Connector; Body Material:Aluminum; Series:PT00; Number of Contacts:8; Connector Shell Size:12; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket
PZTA64T1 PNP SILICON DARLINGTON TRANSISTOR SURFACE MOUNT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PZT751T1/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PNP Silicon Planar Epitaxial Transistor
PZT751T1G 功能描述:兩極晶體管 - BJT 2A 80V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PZT751T1G 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR PNP -60V 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR, PNP, -60V
PZT751T1G_10 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:PNP Silicon Planar Epitaxial Transistor
PZT751T3 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 2A I(C) | TO-261AA