參數(shù)資料
型號(hào): PZT65
廠商: ON SEMICONDUCTOR
英文描述: HIGH CURRENT NPN SILICON TRANSISTOR SURFACE MOUNT
中文描述: 大電流NPN硅晶體管表面貼裝
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 101K
代理商: PZT65
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristics
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
60
Vdc
Collector–Emitter Breakdown Voltage
(IC = 100
μ
Adc, IE = 0)
V(BR)CBO
80
Vdc
Emitter–Base Breakdown Voltage
(IE = 10
μ
Adc, IC = 0)
V(BR)EBO
5.0
Vdc
Base–Emitter Cutoff Current
(VEB = 4.0 Vdc)
IEBO
0.1
μ
Adc
Collector–Base Cutoff Current
(VCB = 80 Vdc, IE = 0)
ON CHARACTERISTICS (2)
ICBO
100
nAdc
DC Current Gain
(IC = 50 mAdc, VCE = 2.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
(IC = 1.0 Adc, VCE = 2.0 Vdc)
(IC = 2.0 Adc, VCE = 2.0 Vdc)
hFE
75
75
75
40
Collector–Emitter Saturation Voltages
(IC = 2.0 Adc, IB = 200 mAdc)
(IC = 1.0 Adc, IB = 100 mAdc)
VCE(sat)
0.5
0.3
Vdc
Base–Emitter Voltages
(IC = 1.0 Adc, VCE = 2.0 Vdc)
VBE(on)
1.0
Vdc
Base–Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 100 mAdc)
VBE(sat)
1.2
Vdc
Current–Gain — Bandwidth
(IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
fT
75
MHz
2. Pulse Test: Pulse Width
300
μ
s, Duty Cycle = 2.0%
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