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參數(shù)資料
| 型號(hào)： | PZT651T1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN Silicon Planar Epitaxial Transistor(NPN型外延晶體管) |
| 中文描述： | 2000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-261AA |
| 封裝： | CASE 318E-04, 4 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 82K |
| 代理商： | PZT651T1 |
Semiconductor Components Industries, LLC, 2005
May, 2005 Rev. 5
1
Publication Order Number:
PZT651T1/D
PZT651T1
Preferred Device
NPN Silicon Planar
Epitaxial Transistor
This NPN Silicon Epitaxial transistor is designed for use in
industrial and consumer applications. The device is housed in the
SOT223 package which is designed for medium power surface
mount applications.
SOT223 package ensures level mounting, resulting in improved
thermal conduction, and allows visual inspection of soldered joints.
The formed leads absorb thermal stress during soldering, eliminating
the possibility of damage to the die.
Features
High Current: 2.0 Amp
The SOT223 package can be soldered using wave or reflow
Available in 12 mm Tape and Reel
Use PZT651T1 to order the 7 inch/1000 unit reel
Use PZT651T3 to order the 13 inch/4000 unit reel
PNP Complement is PZT751T1
PbFree Package is Available
MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
60
Vdc
CollectorBase Voltage
V
CBO
80
Vdc
EmitterBase Voltage
V
EBO
5.0
Vdc
Collector Current
I
C
2.0
Adc
Total Power Dissipation @ T
A
= 25
°
C
(Note 1)
Derate above 25
°
C
P
D
0.8
6.4
W
mW/
°
C
Storage Temperature Range
T
stg
65 to 150
°
C
Junction Temperature
T
J
150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance from
JunctiontoAmbient in Free Air
R
JA
156
°
C/W
Maximum Temperature for Soldering
Purposes
Time in Solder Bath
T
L
260
10
°
C
Sec
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Device mounted on a FR4 glass epoxy printed circuit board using minimum
recommended footprint.
MARKING
DIAGRAM
TO261AA
CASE 318E04
STYLE 1
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
A
WW
= Assembly Location
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
AWW
651
SOT223 PACKAGE HIGH CURRENT
NPN SILICON TRANSISTOR
SURFACE MOUNT
COLLECTOR 2,4
BASE
1
EMITTER 3
12
3
4
Preferred
devices are recommended choices for future use
and best overall value.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PZT65 | HIGH CURRENT NPN SILICON TRANSISTOR SURFACE MOUNT |
| PZT651T3 | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-261AA |
| PZT751T1 | PNP Silicon Planar Epitaxial Transistor(硅PNP平面外延晶體管) |
| PZT751T1G | PNP Silicon Planar Epitaxial Transistor |
| PZT751T1 | SOT-223 PACKAGE HIGH CURRENT PNP SILICON TRANSISTOR SURFACE MOUNT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PZT651T1/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN Silicon Planar Epitaxial Transistor |
| PZT651T1G | 功能描述:兩極晶體管 - BJT 2A 80V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PZT651T3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-261AA |
| PZT669A | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:Epitaxial Planar Transistor |
| PZT6718 | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:Epitaxial Planar Transistor |
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