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參數(shù)資料
| 型號： | PZT651T1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN Silicon Planar Epitaxial Transistor(NPN型外延晶體管) |
| 中文描述： | 2000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-261AA |
| 封裝： | CASE 318E-04, 4 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 82K |
| 代理商： | PZT651T1 |
PZT651T1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristics
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(I
C
= 10 mAdc, I
B
= 0)
V
(BR)CEO
60
Vdc
CollectorEmitter Breakdown Voltage
(I
C
= 100 Adc, I
E
= 0)
V
(BR)CBO
80
Vdc
EmitterBase Breakdown Voltage
(I
E
= 10 Adc, I
C
= 0)
V
(BR)EBO
5.0
Vdc
BaseEmitter Cutoff Current
(V
EB
= 4.0 Vdc)
I
EBO
0.1
Adc
CollectorBase Cutoff Current
(V
CB
= 80 Vdc, I
E
= 0)
I
CBO
100
nAdc
ON CHARACTERISTICS
(Note 2)
DC Current Gain
(I
C
= 50 mAdc, V
CE
= 2.0 Vdc)
(I
C
= 500 mAdc, V
CE
= 2.0 Vdc)
(I
C
= 1.0 Adc, V
CE
= 2.0 Vdc)
(I
C
= 2.0 Adc, V
CE
= 2.0 Vdc)
h
FE
75
75
75
40
CollectorEmitter Saturation Voltages
(I
C
= 2.0 Adc, I
B
= 200 mAdc)
(I
C
= 1.0 Adc, I
B
= 100 mAdc)
V
CE(sat)
0.5
0.3
Vdc
BaseEmitter Voltages
(I
C
= 1.0 Adc, V
CE
= 2.0 Vdc)
V
BE(on)
1.0
Vdc
BaseEmitter Saturation Voltage
(I
C
= 1.0 Adc, I
B
= 100 mAdc)
V
BE(sat)
1.2
Vdc
CurrentGain — Bandwidth
(I
C
= 50 mAdc, V
CE
= 5.0 Vdc, f = 100 MHz)
2. Pulse Test: Pulse Width
≤
300 s, Duty Cycle = 2.0%
f
T
75
MHz
ORDERING INFORMATION
Device
Package
Shipping
PZT651T1
SOT223
1000 / Tape and Reel
PZT651T1G
SOT223
(PbFree)
1000 / Tape and Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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| PZT751T1 | PNP Silicon Planar Epitaxial Transistor(硅PNP平面外延晶體管) |
| PZT751T1G | PNP Silicon Planar Epitaxial Transistor |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PZT651T1/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN Silicon Planar Epitaxial Transistor |
| PZT651T1G | 功能描述:兩極晶體管 - BJT 2A 80V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PZT651T3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-261AA |
| PZT669A | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:Epitaxial Planar Transistor |
| PZT6718 | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:Epitaxial Planar Transistor |
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