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參數(shù)資料
| 型號： | PZT2907AT1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | SOT-223 PACKAGE PNP SILICON TRANSISTOR SURFACE MOUNT |
| 中文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-261AA |
| 封裝： | CASE 318E-04, 4 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 139K |
| 代理商： | PZT2907AT1 |
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS(2)
Symbol
Min
Typ
Max
Unit
DC Current Gain
(IC = –0.1 mAdc, VCE = –10 Vdc)
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
(IC = –150 mAdc, VCE = –10 Vdc)
(IC = –500 mAdc, VCE = –10 Vdc)
hFE
75
100
100
100
50
—
—
—
—
—
—
—
—
300
—
—
Collector-Emitter Saturation Voltages
(IC = –150 mAdc, IB = –15 mAdc)
(IC = – 500 mAdc, IB = –50 mAdc)
VCE(sat)
—
—
—
—
–0.4
–1.6
Vdc
Base-Emitter Saturation Voltages
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
DYNAMIC CHARACTERISTICS
VBE(sat)
—
—
—
—
–1.3
–2.6
Vdc
Current-Gain — Bandwidth Product (IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz)
Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance (VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz)
SWITCHING TIMES
fT
Cc
Ce
200
—
—
MHz
—
—
8.0
pF
—
—
30
pF
Turn-On Time
IB1 = –15 mAdc)
ton
—
—
45
ns
Delay Time
(VCC = –30 Vdc, IC = –150 mAdc,
td
tr
toff
ts
tf
—
—
10
Rise Time
—
—
40
Turn-Off Time
IB1 = IB2 = –15 mAdc)
—
—
100
ns
Storage Time
(VCC = –6.0 Vdc, IC = –150 mAdc,
—
—
80
Fall Time
—
—
30
2. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle = 2.0%.
Figure 1. Delay and Rise
Time Test Circuit
Figure 2. Storage and Fall
Time Test Circuit
INPUT
Zo = 50
PRF = 150 Hz
RISE TIME
≤
2.0 ns
0
1.0 k
50
– 16 V
200 ns
– 30 V
200
TO OSCILLOSCOPE
RISE TIME
≤
5.0 ns
0
1.0 k
50
– 30 V
200 ns
– 6.0 V
37
TO OSCILLOSCOPE
RISE TIME
≤
5.0 ns
+15 V
1.0 k
1N916
INPUT
Zo = 50
PRF = 150 Hz
RISE TIME
≤
2.0 ns
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| PZT2907AT1G | 功能描述:兩極晶體管 - BJT 600mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PZT2907AT1G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| PZT2907AT3 | 功能描述:兩極晶體管 - BJT 600mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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