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參數(shù)資料
| 型號(hào)： | PZT2907AT1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | SOT-223 PACKAGE PNP SILICON TRANSISTOR SURFACE MOUNT |
| 中文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-261AA |
| 封裝： | CASE 318E-04, 4 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 139K |
| 代理商： | PZT2907AT1 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
This PNP Silicon Epitaxial transistor is designed for use in linear and
switching applications. The device is housed in the SOT-223 package which is
designed for medium power surface mount applications.
NPN Complement is PZT2222AT1
The SOT-223 package can be soldered using wave or reflow
SOT-223 package ensures level mounting, resulting in improved thermal
conduction, and allows visual inspection of soldered joints. The formed
leads absorb thermal stress during soldering eliminating the possibility of
damage to the die.
Available in 12 mm tape and reel
Use PZT2907AT1 to order the 7 inch/1000 unit reel.
Use PZT2907AT3 to order the 13 inch/4000 unit reel.
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
–60
Vdc
Collector-Base Voltage
–60
Vdc
Emitter-Base Voltage
–5.0
Vdc
Collector Current
Total Power Dissipation @ TA = 25
°
C(1)
Derate above 25
°
C
–600
mAdc
1.5
12
Watts
mW/
°
C
Operating and Storage Temperature Range
TJ, Tstg
–65 to 150
°
C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction-to-Ambient (surface mounted)
R
θ
JA
TL
83.3
°
C/W
Lead Temperature for Soldering, 0.0625
″
from case
Time in Solder Bath
260
10
°
C
Sec
DEVICE MARKING
P2F
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = –10
μ
Adc, IE = 0)
Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
Emitter-Base Breakdown Voltage (IE = –10
μ
Adc, IC = 0)
Collector-Base Cutoff Current (VCB = –50 Vdc, IE = 0)
Collector-Emitter Cutoff Current (VCE = –30 Vdc, VBE = 0.5 Vdc)
Base-Emitter Cutoff Current (VCE = –30 Vdc, VBE = –0.5 Vdc)
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEX
IBEX
–60
°
—
°
—
Vdc
–60
—
—
Vdc
–5.0
°
—
°
—
Vdc
—
°
—
°
–10
nAdc
—
—
–50
nAdc
—
—
–50
nAdc
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by PZT2907AT1/D
SEMICONDUCTOR TECHNICAL DATA
SOT-223 PACKAGE
PNP SILICON
TRANSISTOR
SURFACE MOUNT
Motorola Preferred Device
CASE 318E-04, STYLE 1
TO-261AA
1
2
3
4
COLLECTOR
2,4
BASE 1
3
EMITTER
REV 4
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| PZT651T1 | NPN Silicon Planar Epitaxial Transistor(NPN型外延晶體管) |
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| PZT651T3 | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-261AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PZT2907AT1/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PNP Silicon Planar Epitaxial Transistor |
| PZT2907AT1_11 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:PNP Silicon Epitaxial Transistor |
| PZT2907AT1G | 功能描述:兩極晶體管 - BJT 600mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PZT2907AT1G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| PZT2907AT3 | 功能描述:兩極晶體管 - BJT 600mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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